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Timoshenko VY, Gonchar KA, Mirgorodskiy IV, et al. Efficient visible luminescence of nanocrystalline silicon prepared from amorphous silicon films by thermal annealing and stain etching. Nanoscale Res Lett. 2011;6(1):349doi: 10.1186/1556-276X-6-349.
Timoshenko, V. Y., Gonchar, K. A., Mirgorodskiy, I. V., Maslova, N. E., Nikulin, V. E., Mussabek, G. K., Taurbaev, Y. T., Svanbayev, E. A., & Taurbaev, T. I. (2011). Efficient visible luminescence of nanocrystalline silicon prepared from amorphous silicon films by thermal annealing and stain etching. Nanoscale research letters, 6(1), 349. https://doi.org/10.1186/1556-276X-6-349
Timoshenko, Victor Yur'evich, et al. "Efficient visible luminescence of nanocrystalline silicon prepared from amorphous silicon films by thermal annealing and stain etching." Nanoscale research letters vol. 6,1 (2011): 349. doi: https://doi.org/10.1186/1556-276X-6-349
Timoshenko VY, Gonchar KA, Mirgorodskiy IV, Maslova NE, Nikulin VE, Mussabek GK, Taurbaev YT, Svanbayev EA, Taurbaev TI. Efficient visible luminescence of nanocrystalline silicon prepared from amorphous silicon films by thermal annealing and stain etching. Nanoscale Res Lett. 2011 Apr 19;6(1):349. doi: 10.1186/1556-276X-6-349. PMID: 21711891; PMCID: PMC3211438.
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Nanoscale Res Lett. 2011 Apr 19;6(1):349. doi: 10.1186/1556-276X-6-349.

Efficient visible luminescence of nanocrystalline silicon prepared from amorphous silicon films by thermal annealing and stain etching.

Nanoscale research letters

Victor Yur'evich Timoshenko, Kirill Alexandrovich Gonchar, Ivan Victorovich Mirgorodskiy, Natalia Evgen'evna Maslova, Valery Eduardovich Nikulin, Gaukhar Kalizhanovna Mussabek, Yerzhan Toktarovich Taurbaev, Eldos Abugalievich Svanbayev, Toktar Iskataevich Taurbaev

Affiliations

  1. Department of Physics, Lomonosov Moscow State University, Leninskie Gory 1, Moscow 119991, Russia. [email protected].

PMID: 21711891 PMCID: PMC3211438 DOI: 10.1186/1556-276X-6-349

Abstract

Films of nanocrystalline silicon (nc-Si) were prepared from hydrogenated amorphous silicon (a-Si:H) by using rapid thermal annealing. The formed nc-Si films were subjected to stain etching in hydrofluoric acid solutions in order to passivate surfaces of nc-Si. The optical reflectance spectroscopy revealed the nc-Si formation as well as the high optical quality of the formed films. The Raman scattering spectroscopy was used to estimate the mean size and volume fraction of nc-Si in the annealed films, which were about 4 to 8 nm and 44 to 90%, respectively, depending on the annealing regime. In contrast to as-deposited a-Si:H films, the nc-Si films after stain etching exhibited efficient photoluminescence in the spectral range of 600 to 950 nm at room temperature. The photoluminescence intensity and lifetimes of the stain etched nc-Si films were similar to those for conventional porous Si formed by electrochemical etching. The obtained results indicate new possibilities to prepare luminescent thin films for Si-based optoelectronics.

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