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Baral JK, Majumdar HS, Laiho A, et al. Organic memory using [6,6]-phenyl-C(61) butyric acid methyl ester: morphology, thickness and concentration dependence studies. Nanotechnology. 2007;19(3):035203doi: 10.1088/0957-4484/19/03/035203.
Baral, J. K., Majumdar, H. S., Laiho, A., Jiang, H., Kauppinen, E. I., Ras, R. H., Ruokolainen, J., Ikkala, O., & Osterbacka, R. (2008). Organic memory using [6,6]-phenyl-C(61) butyric acid methyl ester: morphology, thickness and concentration dependence studies. Nanotechnology, 19(3), 035203. https://doi.org/10.1088/0957-4484/19/03/035203
Baral, Jayanta K, et al. "Organic memory using [6,6]-phenyl-C(61) butyric acid methyl ester: morphology, thickness and concentration dependence studies." Nanotechnology vol. 19,3 (2008): 035203. doi: https://doi.org/10.1088/0957-4484/19/03/035203
Baral JK, Majumdar HS, Laiho A, Jiang H, Kauppinen EI, Ras RH, Ruokolainen J, Ikkala O, Osterbacka R. Organic memory using [6,6]-phenyl-C(61) butyric acid methyl ester: morphology, thickness and concentration dependence studies. Nanotechnology. 2008 Jan 23;19(3):035203. doi: 10.1088/0957-4484/19/03/035203. Epub 2007 Dec 13. PMID: 21817563.
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Nanotechnology. 2008 Jan 23;19(3):035203. doi: 10.1088/0957-4484/19/03/035203. Epub 2007 Dec 13.

Organic memory using [6,6]-phenyl-C(61) butyric acid methyl ester: morphology, thickness and concentration dependence studies.

Nanotechnology

Jayanta K Baral, Himadri S Majumdar, Ari Laiho, Hua Jiang, Esko I Kauppinen, Robin H A Ras, Janne Ruokolainen, Olli Ikkala, Ronald Osterbacka

Affiliations

  1. Center for Functional Materials and Department of Physics, Åbo Akademi University, Porthansgatan 3, Turku, FIN-20500, Finland. Graduate School of Materials Research, Universities of Turku, Turku, Finland.

PMID: 21817563 DOI: 10.1088/0957-4484/19/03/035203

Abstract

We report a simple memory device in which the fullerene-derivative [6,6]-phenyl-C(61) butyric acid methyl ester (PCBM) mixed with inert polystyrene (PS) matrix is sandwiched between two aluminum (Al) electrodes. Transmission electron microscopy (TEM) images of PCBM:PS films showed well controlled morphology without forming any aggregates at low weight percentages (<10 wt%) of PCBM in PS. Energy dispersive x-ray spectroscopy (EDX) analysis of the device cross-sections indicated that the thermal evaporation of the Al electrodes did not lead to the inclusion of Al metal nanoparticles into the active PCBM:PS film. Above a threshold voltage of <3 V, independent of thickness, a consistent negative differential resistance (NDR) is observed in devices in the thickness range from 200 to 350 nm made from solutions with 4-10 wt% of PCBM in PS. We found that the threshold voltage (V(th)) for switching from the high-impedance state to the low-impedance state, the voltage at maximum current density (V(max)) and the voltage at minimum current density (V(min)) in the NDR regime are constant within this thickness range. The current density ratio at V(max) and V(min) is more than or equal to 10, increasing with thickness. Furthermore, the current density is exponentially dependent on the longest tunneling jump between two PCBM molecules, suggesting a tunneling mechanism between individual PCBM molecules. This is further supported with temperature independent NDR down to 240 K.

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