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Wei D, Baral JK, Osterbacka R, et al. Memory effect in an ionic liquid matrix containing single-walled carbon nanotubes and polystyrene. Nanotechnology. 2008;19(5):055203doi: 10.1088/0957-4484/19/05/055203.
Wei, D., Baral, J. K., Osterbacka, R., & Ivaska, A. (2008). Memory effect in an ionic liquid matrix containing single-walled carbon nanotubes and polystyrene. Nanotechnology, 19(5), 055203. https://doi.org/10.1088/0957-4484/19/05/055203
Wei, Di, et al. "Memory effect in an ionic liquid matrix containing single-walled carbon nanotubes and polystyrene." Nanotechnology vol. 19,5 (2008): 055203. doi: https://doi.org/10.1088/0957-4484/19/05/055203
Wei D, Baral JK, Osterbacka R, Ivaska A. Memory effect in an ionic liquid matrix containing single-walled carbon nanotubes and polystyrene. Nanotechnology. 2008 Feb 06;19(5):055203. doi: 10.1088/0957-4484/19/05/055203. Epub 2008 Jan 14. PMID: 21817601.
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Nanotechnology. 2008 Feb 06;19(5):055203. doi: 10.1088/0957-4484/19/05/055203. Epub 2008 Jan 14.

Memory effect in an ionic liquid matrix containing single-walled carbon nanotubes and polystyrene.

Nanotechnology

Di Wei, Jayanta K Baral, Ronald Osterbacka, Ari Ivaska

Affiliations

  1. Process Chemistry Centre, c/o Laboratory of Analytical Chemistry, Åbo Akademi University, Biskopsgatan 8, FIN-20500 Åbo/Turku, Finland. Centre of Advanced Photonics and Electronics, Department of Engineering, University of Cambridge, 9 J J Thomson Avenue, Cambridge CB3 0FA, UK.

PMID: 21817601 DOI: 10.1088/0957-4484/19/05/055203

Abstract

We report the use of an ionic liquid (IL) gel matrix containing a blend of single-walled carbon nanotubes (SWNTs) and polystyrene (PS) as a memory device. SWNTs and PS beads were mixed in a room-temperature IL, 1-butyl-3-methyl-hexafluorophosphate ([BMIM][PF(6)]). The composite gel was sandwiched between a bottom ITO glass and a top aluminium electrode. By merely changing the concentrations of SWNTs in the inert insulating PS matrix, we observed several distinct electrical properties of the device, such as an insulator, a memory in terms of switching and negative differential resistance (NDR), and a conductor. The electric bistable switching hops between a higher impedance (OFF) state and a lower impedance (ON) state which is approximately equal to five orders of current decays.

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