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Jenke MG, Lerose D, Niederberger C, et al. Toward local growth of individual nanowires on three-dimensional microstructures by using a minimally invasive catalyst templating method. Nano Lett. 2011;11(10):4213-7doi: 10.1021/nl2021448.
Jenke, M. G., Lerose, D., Niederberger, C., Michler, J., Christiansen, S., & Utke, I. (2011). Toward local growth of individual nanowires on three-dimensional microstructures by using a minimally invasive catalyst templating method. Nano letters, 11(10), 4213-7. https://doi.org/10.1021/nl2021448
Jenke, Martin Günter, et al. "Toward local growth of individual nanowires on three-dimensional microstructures by using a minimally invasive catalyst templating method." Nano letters vol. 11,10 (2011): 4213-7. doi: https://doi.org/10.1021/nl2021448
Jenke MG, Lerose D, Niederberger C, Michler J, Christiansen S, Utke I. Toward local growth of individual nanowires on three-dimensional microstructures by using a minimally invasive catalyst templating method. Nano Lett. 2011 Oct 12;11(10):4213-7. doi: 10.1021/nl2021448. Epub 2011 Sep 16. PMID: 21899320.
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Nano Lett. 2011 Oct 12;11(10):4213-7. doi: 10.1021/nl2021448. Epub 2011 Sep 16.

Toward local growth of individual nanowires on three-dimensional microstructures by using a minimally invasive catalyst templating method.

Nano letters

Martin Günter Jenke, Damiana Lerose, Christoph Niederberger, Johann Michler, Silke Christiansen, Ivo Utke

Affiliations

  1. EMPA, Swiss Federal Laboratories for Materials Science and Technology , Feuerwerkerstr. 39, CH-3602 Thun, Switzerland.

PMID: 21899320 DOI: 10.1021/nl2021448

Abstract

We present a novel minimally invasive postprocessing method for catalyst templating based on focused charged particle beam structuring, which enables a localized vapor-liquid-solid (VLS) growth of individual nanowires on prefabricated three-dimensional micro- and nanostructures. Gas-assisted focused electron beam induced deposition (FEBID) was used to deposit a SiO(x) surface layer of about 10 × 10 μm(2) on top of a silicon atomic force microscopy cantilever. Gallium focused ion beam (FIB) milling was used to make a hole through the SiO(x) layer into the underlying silicon. The hole was locally filled with a gold catalyst via FEBID using either Me(2)Au(tfac) or Me(2)Au(acac) as precursor. Subsequent chemical vapor deposition (CVD)-induced VLS growth using a mixture of SiH(4) and Ar resulted in individual high quality crystalline nanowires. The process, its yield, and the resulting angular distribution/crystal orientation of the silicon nanowires are discussed. The presented combined FIB/FEBID/CVD-VLS process is currently the only proven method that enables the growth of individual monocrystalline Si nanowires on prestructured substrates and devices.

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