J Phys Condens Matter. 2012 Jan 11;24(1):015701. doi: 10.1088/0953-8984/24/1/015701. Epub 2011 Dec 02.

Electrical transport properties of CuS single crystals.

Journal of physics. Condensed matter : an Institute of Physics journal

A Casaca, E B Lopes, A P Gonçalves, M Almeida

PMID: 22133599 DOI: 10.1088/0953-8984/24/1/015701

Abstract

Electrical resistivity, transverse magnetoresistance and thermoelectric power measurements were performed on CuS high quality single crystals in the range 1.2-300 K and under fields of up to 16 T. The zero field resistivity data are well described below 55 K by a quasi-2D model, consistent with a carrier confinement at lower temperatures, before the transition to the superconducting state. The transverse magnetoresistance develops mainly below 30 K and attains values as large as 470% for a 16 T field at 5 K, this behaviour being ascribed to a band effect mechanism, with a possible magnetic field induced DOS change at the Fermi level. The transverse magnetoresistance shows no signs of saturation, following a power law with field Δρ/ρ(0) ∝ H(1.4), suggesting the existence of open orbits for carriers at the Fermi surface. The thermoelectric power shows an unusual temperature dependence, probably as a result of the complex band structure of CuS.

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