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Banga D, Jarayaju N, Sheridan L, et al. Electrodeposition of CuInSe2 (CIS) via electrochemical atomic layer deposition (E-ALD). Langmuir. 2012;28(5):3024-31doi: 10.1021/la203574y.
Banga, D., Jarayaju, N., Sheridan, L., Kim, Y. G., Perdue, B., Zhang, X., Zhang, Q., & Stickney, J. (2012). Electrodeposition of CuInSe2 (CIS) via electrochemical atomic layer deposition (E-ALD). Langmuir : the ACS journal of surfaces and colloids, 28(5), 3024-31. https://doi.org/10.1021/la203574y
Banga, Dhego, et al. "Electrodeposition of CuInSe2 (CIS) via electrochemical atomic layer deposition (E-ALD)." Langmuir : the ACS journal of surfaces and colloids vol. 28,5 (2012): 3024-31. doi: https://doi.org/10.1021/la203574y
Banga D, Jarayaju N, Sheridan L, Kim YG, Perdue B, Zhang X, Zhang Q, Stickney J. Electrodeposition of CuInSe2 (CIS) via electrochemical atomic layer deposition (E-ALD). Langmuir. 2012 Feb 07;28(5):3024-31. doi: 10.1021/la203574y. Epub 2012 Jan 20. PMID: 22211357.
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Langmuir. 2012 Feb 07;28(5):3024-31. doi: 10.1021/la203574y. Epub 2012 Jan 20.

Electrodeposition of CuInSe2 (CIS) via electrochemical atomic layer deposition (E-ALD).

Langmuir : the ACS journal of surfaces and colloids

Dhego Banga, Nagarajan Jarayaju, Leah Sheridan, Youn-Geun Kim, Brian Perdue, Xin Zhang, Qinghui Zhang, John Stickney

Affiliations

  1. Materials Physics Department, Sandia National Laboratories, Livermore, California 94550, United States.

PMID: 22211357 DOI: 10.1021/la203574y

Abstract

The growth of stoichiometric CuInSe(2) (CIS) on Au substrates using electrochemical atomic layer deposition (E-ALD) is reported here. Parameters for a ternary E-ALD cycle were investigated and included potentials, step sequence, solution compositions and timing. CIS was also grown by combining cycles for two binary compounds, InSe and Cu(2)Se, using a superlattice sequence. The formation, composition, and crystal structure of each are discussed. Stoichiometric CIS samples were formed using the superlattice sequence by performing 25 periods, each consisting of 3 cycles of InSe and 1 cycle of Cu(2)Se. The deposits were grown using 0.14, -0.7, and -0.65 V for Cu, In, and Se precursor solutions, respectively. XRD patterns displayed peaks consistent with the chalcopyrite phase of CIS, for the as-deposited samples, with the (112) reflection as the most prominent. AFM images of deposits suggested conformal deposition, when compared with corresponding image of the Au on glass substrate.

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