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Chrastina D, Vanacore GM, Bollani M, et al. Patterning-induced strain relief in single lithographic SiGe nanostructures studied by nanobeam x-ray diffraction. Nanotechnology. 2012;23(15):155702doi: 10.1088/0957-4484/23/15/155702.
Chrastina, D., Vanacore, G. M., Bollani, M., Boye, P., Schöder, S., Burghammer, M., Sordan, R., Isella, G., Zani, M., & Tagliaferri, A. (2012). Patterning-induced strain relief in single lithographic SiGe nanostructures studied by nanobeam x-ray diffraction. Nanotechnology, 23(15), 155702. https://doi.org/10.1088/0957-4484/23/15/155702
Chrastina, D, et al. "Patterning-induced strain relief in single lithographic SiGe nanostructures studied by nanobeam x-ray diffraction." Nanotechnology vol. 23,15 (2012): 155702. doi: https://doi.org/10.1088/0957-4484/23/15/155702
Chrastina D, Vanacore GM, Bollani M, Boye P, Schöder S, Burghammer M, Sordan R, Isella G, Zani M, Tagliaferri A. Patterning-induced strain relief in single lithographic SiGe nanostructures studied by nanobeam x-ray diffraction. Nanotechnology. 2012 Apr 20;23(15):155702. doi: 10.1088/0957-4484/23/15/155702. PMID: 22456306.
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Nanotechnology. 2012 Apr 20;23(15):155702. doi: 10.1088/0957-4484/23/15/155702.

Patterning-induced strain relief in single lithographic SiGe nanostructures studied by nanobeam x-ray diffraction.

Nanotechnology

D Chrastina, G M Vanacore, M Bollani, P Boye, S Schöder, M Burghammer, R Sordan, G Isella, M Zani, A Tagliaferri

Affiliations

  1. CNISM and L-NESS, Dipartimento di Fisica del Politecnico di Milano, Polo Regionale di Como, via Anzani 42, I-22100 Como, Italy.

PMID: 22456306 DOI: 10.1088/0957-4484/23/15/155702

Abstract

The continued downscaling in SiGe heterostructures is approaching the point at which lateral confinement leads to a uniaxial strain state, giving high enhancements of the charge carrier mobility. Investigation of the strain relaxation as induced by the patterning of a continuous SiGe layer is thus of scientific and technological importance. In the present work, the strain in single lithographically defined low-dimensional SiGe structures has been directly mapped via nanobeam x-ray diffraction. We found that the nanopatterning is able to induce an anisotropic strain relaxation, leading to a conversion of the strain state from biaxial to uniaxial. Its origin is fully compatible with a pure elastic deformation of the crystal lattice without involving plastic relaxation by injection of misfit dislocations.

© 2012 IOP Publishing Ltd

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