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Phys Rev Lett. 2012 Feb 24;108(8):083603. doi: 10.1103/PhysRevLett.108.083603. Epub 2012 Feb 23.

Control of material damping in high-Q membrane microresonators.

Physical review letters

P-L Yu, T P Purdy, C A Regal

Affiliations

  1. JILA, University of Colorado and National Institute of Standards and Technology, Boulder, Colorado 80309, USA.

PMID: 22463530 DOI: 10.1103/PhysRevLett.108.083603

Abstract

We study the mechanical quality factors of bilayer aluminum-silicon-nitride membranes. By coating ultrahigh-Q Si(3)N(4) membranes with a more lossy metal, we can precisely measure the effect of material loss on Q's of tensioned resonator modes over a large range of frequencies. We develop a theoretical model that interprets our results and predicts the damping can be reduced significantly by patterning the metal film. Using such patterning, we fabricate Al-Si(3)N(4) membranes with ultrahigh Q at room temperature. Our work elucidates the role of material loss in the Q of membrane resonators and informs the design of hybrid mechanical oscillators for optical-electrical-mechanical quantum interfaces.

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