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Phys Rev Lett. 2012 Apr 13;108(15):157201. doi: 10.1103/PhysRevLett.108.157201. Epub 2012 Apr 09.

Field-induced negative differential spin lifetime in silicon.

Physical review letters

Jing Li, Lan Qing, Hanan Dery, Ian Appelbaum

Affiliations

  1. Department of Physics and Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742, USA.

PMID: 22587278 DOI: 10.1103/PhysRevLett.108.157201

Abstract

We show that the electric-field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxation mechanism. Comparison of empirical results from long-distance spin transport devices with detailed MonteĀ Carlo simulations confirms a strong spin depolarization beyond what is expected from the standard Elliott-Yafet theory even at low temperatures. The enhanced spin-flip mechanism is attributed to phonon emission processes during which electrons are scattered between conduction band valleys that reside on different crystal axes. This leads to anomalous behavior, where (beyond a critical field) reduction of the transit time between spin-injector and spin-detector is accompanied by a counterintuitive reduction in spin polarization and an apparent negative spin lifetime.

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