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Büyükköse S, Vratzov B, Ataç D, et al. Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO₂/Si using nanoimprint lithography. Nanotechnology. 2012;23(31):315303doi: 10.1088/0957-4484/23/31/315303.
Büyükköse, S., Vratzov, B., Ataç, D., van der Veen, J., Santos, P. V., & van der Wiel, W. G. (2012). Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO₂/Si using nanoimprint lithography. Nanotechnology, 23(31), 315303. https://doi.org/10.1088/0957-4484/23/31/315303
Büyükköse, S, et al. "Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO₂/Si using nanoimprint lithography." Nanotechnology vol. 23,31 (2012): 315303. doi: https://doi.org/10.1088/0957-4484/23/31/315303
Büyükköse S, Vratzov B, Ataç D, van der Veen J, Santos PV, van der Wiel WG. Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO₂/Si using nanoimprint lithography. Nanotechnology. 2012 Aug 10;23(31):315303. doi: 10.1088/0957-4484/23/31/315303. PMID: 22802162.
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Nanotechnology. 2012 Aug 10;23(31):315303. doi: 10.1088/0957-4484/23/31/315303.

Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO₂/Si using nanoimprint lithography.

Nanotechnology

S Büyükköse, B Vratzov, D Ataç, J van der Veen, P V Santos, W G van der Wiel

Affiliations

  1. NanoElectronics Group, MESAC Institute for Nanotechnology, University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands. [email protected]

PMID: 22802162 DOI: 10.1088/0957-4484/23/31/315303

Abstract

Ultrahigh-frequency surface acoustic wave devices were fabricated on a ZnO/SiO₂/Si substrate using step-and-flash nanoimprint lithography combined with hydrogen silsesquioxane (HSQ) planarization. Excellent critical dimension control was demonstrated for interdigital transducers with finger electrode widths from 125 down to 65 nm. Fundamental and higher-order Rayleigh modes up to 16.1 GHz were excited and detected, which is the highest frequency for ZnO-based transducers on silicon reported so far. Surface acoustic modes were confirmed with numerical simulations. Simulation results showed good agreement with the experimental data.

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