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Opt Lett. 2012 Aug 01;37(15):3039-41. doi: 10.1364/OL.37.003039.

Gallium-nitride-based plasmonic multilayer operating at 1.55 μm.

Optics letters

Arnaud Stolz, Laurence Considine, Salim Faci, Elhadj Dogheche, Charlotte Tripon-Canseliet, Brigitte Loiseaux, Dimitris Pavlidis, Didier Decoster, Jean Chazelas

Affiliations

  1. Institut d’Électronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Villeneuve d’Ascq Cedex, France.

PMID: 22859078 DOI: 10.1364/OL.37.003039

Abstract

In this Letter, we have designed and fabricated a III-V semiconductor multilayer based on surface plasmon resonance (SPR) operating at the telecom wavelength. Optimization of the optogeometrical parameters and the metal/semiconductor layers required for this novel structure was conducted accurately by theoretical tools using the Maxwell equations. Technological fabrication of the device and its experimental characterizations using an evanescent coupling configuration was performed: the results have confirmed the existence of SPR associated to a sharp width response. This study could be a first step in the design of new plasmonic-semiconductor-based optical devices such as modulators and switches.

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