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Hruszkewycz SO, Holt MV, Murray CE, et al. Quantitative nanoscale imaging of lattice distortions in epitaxial semiconductor heterostructures using nanofocused X-ray Bragg projection ptychography. Nano Lett. 2012;12(10):5148-54doi: 10.1021/nl303201w.
Hruszkewycz, S. O., Holt, M. V., Murray, C. E., Bruley, J., Holt, J., Tripathi, A., Shpyrko, O. G., McNulty, I., Highland, M. J., & Fuoss, P. H. (2012). Quantitative nanoscale imaging of lattice distortions in epitaxial semiconductor heterostructures using nanofocused X-ray Bragg projection ptychography. Nano letters, 12(10), 5148-54. https://doi.org/10.1021/nl303201w
Hruszkewycz, S O, et al. "Quantitative nanoscale imaging of lattice distortions in epitaxial semiconductor heterostructures using nanofocused X-ray Bragg projection ptychography." Nano letters vol. 12,10 (2012): 5148-54. doi: https://doi.org/10.1021/nl303201w
Hruszkewycz SO, Holt MV, Murray CE, Bruley J, Holt J, Tripathi A, Shpyrko OG, McNulty I, Highland MJ, Fuoss PH. Quantitative nanoscale imaging of lattice distortions in epitaxial semiconductor heterostructures using nanofocused X-ray Bragg projection ptychography. Nano Lett. 2012 Oct 10;12(10):5148-54. doi: 10.1021/nl303201w. Epub 2012 Sep 26. PMID: 22998744.
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Nano Lett. 2012 Oct 10;12(10):5148-54. doi: 10.1021/nl303201w. Epub 2012 Sep 26.

Quantitative nanoscale imaging of lattice distortions in epitaxial semiconductor heterostructures using nanofocused X-ray Bragg projection ptychography.

Nano letters

S O Hruszkewycz, M V Holt, C E Murray, J Bruley, J Holt, A Tripathi, O G Shpyrko, I McNulty, M J Highland, P H Fuoss

Affiliations

  1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA. [email protected]

PMID: 22998744 DOI: 10.1021/nl303201w

Abstract

We imaged nanoscale lattice strain in a multilayer semiconductor device prototype with a new X-ray technique, nanofocused Bragg projection ptychography. Applying this technique to the epitaxial stressor layer of a SiGe-on-SOI structure, we measured the internal lattice behavior in a targeted region of a single device and demonstrated that its internal strain profile consisted of two competing lattice distortions. These results provide the strongest nondestructive test to date of continuum modeling predictions of nanoscale strain distributions.

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