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Chaqmaqchee FA, Balkan N, Herrero JM. Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3μm operation. Nanoscale Res Lett. 2012;7(1):525doi: 10.1186/1556-276X-7-525.
Chaqmaqchee, F. A., Balkan, N., & Herrero, J. M. (2012). Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3μm operation. Nanoscale research letters, 7(1), 525. https://doi.org/10.1186/1556-276X-7-525
Chaqmaqchee, Faten Adel Ismael, et al. "Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3μm operation." Nanoscale research letters vol. 7,1 (2012): 525. doi: https://doi.org/10.1186/1556-276X-7-525
Chaqmaqchee FA, Balkan N, Herrero JM. Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3μm operation. Nanoscale Res Lett. 2012 Sep 25;7(1):525. doi: 10.1186/1556-276X-7-525. PMID: 23009076; PMCID: PMC3499156.
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Nanoscale Res Lett. 2012 Sep 25;7(1):525. doi: 10.1186/1556-276X-7-525.

Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3μm operation.

Nanoscale research letters

Faten Adel Ismael Chaqmaqchee, Naci Balkan, Jose Maria Ulloa Herrero

Affiliations

  1. School of Computer Science and Electronic Engineering, University of Essex, Colchester, CO43SQ, UK. [email protected].

PMID: 23009076 PMCID: PMC3499156 DOI: 10.1186/1556-276X-7-525

Abstract

The Top-Hat hot electron light emission and lasing in semiconductor heterostructure (HELLISH)-vertical cavity semiconductor optical amplifier (VCSOA) is a modified version of a HELLISH-VCSOA device. It has a shorter p-channel and longer n-channel. The device studied in this work consists of a simple GaAs p-i-n junction, containing 11 Ga0.35In0.65 N0.02As0.08/GaAs multiple quantum wells in its intrinsic region; the active region is enclosed between six pairs of GaAs/AlAs top distributed Bragg reflector (DBR) mirrors and 20.5 pairs of AlAs/GaAs bottom DBR mirrors. The operation of the device is based on longitudinal current transport parallel to the layers of the GaAs p-n junction. The device is characterised through I-V-L and by spectral photoluminescence, electroluminescence and electro-photoluminescence measurements. An amplification of about 25 dB is observed at applied voltages of around V = 88 V.

References

  1. Nanoscale Res Lett. 2011 Jan 27;6(1):104 - PubMed

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