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Hocevar M, Immink G, Verheijen M, et al. Growth and optical properties of axial hybrid III-V/silicon nanowires. Nat Commun. 2012;3:1266doi: 10.1038/ncomms2277.
Hocevar, M., Immink, G., Verheijen, M., Akopian, N., Zwiller, V., Kouwenhoven, L., & Bakkers, E. (2012). Growth and optical properties of axial hybrid III-V/silicon nanowires. Nature communications, 31266. https://doi.org/10.1038/ncomms2277
Hocevar, Moïra, et al. "Growth and optical properties of axial hybrid III-V/silicon nanowires." Nature communications vol. 3 (2012): 1266. doi: https://doi.org/10.1038/ncomms2277
Hocevar M, Immink G, Verheijen M, Akopian N, Zwiller V, Kouwenhoven L, Bakkers E. Growth and optical properties of axial hybrid III-V/silicon nanowires. Nat Commun. 2012;3:1266. doi: 10.1038/ncomms2277. PMID: 23232396.
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Nat Commun. 2012;3:1266. doi: 10.1038/ncomms2277.

Growth and optical properties of axial hybrid III-V/silicon nanowires.

Nature communications

Moïra Hocevar, George Immink, Marcel Verheijen, Nika Akopian, Val Zwiller, Leo Kouwenhoven, Erik Bakkers

Affiliations

  1. Kavli Institute of Nanoscience, Delft University of Technology, 2628CJ Delft, The Netherlands.

PMID: 23232396 DOI: 10.1038/ncomms2277

Abstract

Hybrid silicon nanowires with an integrated light-emitting segment can significantly advance nanoelectronics and nanophotonics. They would combine transport and optical characteristics in a nanoscale device, which can operate in the fundamental single-electron and single-photon regime. III-V materials, such as direct bandgap gallium arsenide, are excellent candidates for such optical segments. However, interfacing them with silicon during crystal growth is a major challenge, because of the lattice mismatch, different expansion coefficients and the formation of antiphase boundaries. Here we demonstrate a silicon nanowire with an integrated gallium-arsenide segment. We precisely control the catalyst composition and surface chemistry to obtain dislocation-free interfaces. The integration of gallium arsenide of high optical quality with silicon is enabled by short gallium phosphide buffers. We anticipate that such hybrid silicon/III-V nanowires open practical routes for quantum information devices, where for instance electronic and photonic quantum bits are manipulated in a III-V segment and stored in a silicon section.

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