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Abdi Y, Barati F. Variable electron beam diameter achieved by a titanium oxide/carbon nanotube hetero-structure suitable for nanolithography. Nanotechnology. 2013;24(5):055303doi: 10.1088/0957-4484/24/5/055303.
Abdi, Y., & Barati, F. (2013). Variable electron beam diameter achieved by a titanium oxide/carbon nanotube hetero-structure suitable for nanolithography. Nanotechnology, 24(5), 055303. https://doi.org/10.1088/0957-4484/24/5/055303
Abdi, Yaser, and Barati, Fatemeh. "Variable electron beam diameter achieved by a titanium oxide/carbon nanotube hetero-structure suitable for nanolithography." Nanotechnology vol. 24,5 (2013): 055303. doi: https://doi.org/10.1088/0957-4484/24/5/055303
Abdi Y, Barati F. Variable electron beam diameter achieved by a titanium oxide/carbon nanotube hetero-structure suitable for nanolithography. Nanotechnology. 2013 Feb 08;24(5):055303. doi: 10.1088/0957-4484/24/5/055303. Epub 2013 Jan 11. PMID: 23306765.
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Nanotechnology. 2013 Feb 08;24(5):055303. doi: 10.1088/0957-4484/24/5/055303. Epub 2013 Jan 11.

Variable electron beam diameter achieved by a titanium oxide/carbon nanotube hetero-structure suitable for nanolithography.

Nanotechnology

Yaser Abdi, Fatemeh Barati

Affiliations

  1. Nano-Physics Research Laboratory, Department of Physics, University of Tehran, Tehran, Iran. [email protected]

PMID: 23306765 DOI: 10.1088/0957-4484/24/5/055303

Abstract

We report the fabrication of a titanium oxide/carbon nanotube based field emission device suitable for nanolithography and fabrication of transistors. The growth of carbon nanotubes (CNTs) is performed on silicon substrates using a plasma-enhanced chemical vapor deposition method. The vertically grown CNTs are encapsulated by titanium oxide (TiO(2)) using an atmospheric pressure chemical vapor deposition system. Field emission from the CNTs is realized by mechanical polishing of the prepared structure. Possible applications of such nanostructures as a lithography tool with variable electron beam diameter has been investigated. The obtained results show that a spot size of less than 30 nm can be obtained by applying the proper voltage on TiO(2) surrounding gate. Electrical measurements of the fabricated device confirm the capability of the structure for fabrication of field emission based field effect transistors. By a voltage applied between the gate and the cathode electrode, the emission current from CNTs shows a significant drop, indicating proper control of the gate on the emission current.

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