Display options
Cite
von Bieren A, Patra AK, Krzyk S, et al. Domain-wall induced large magnetoresistance effects at zero applied field in ballistic nanocontacts. Phys Rev Lett. 2013;110(6):067203doi: 10.1103/PhysRevLett.110.067203.
von Bieren, A., Patra, A. K., Krzyk, S., Rhensius, J., Reeve, R. M., Heyderman, L. J., Hoffmann-Vogel, R., & Kläui, M. (2013). Domain-wall induced large magnetoresistance effects at zero applied field in ballistic nanocontacts. Physical review letters, 110(6), 067203. https://doi.org/10.1103/PhysRevLett.110.067203
von Bieren, Arndt, et al. "Domain-wall induced large magnetoresistance effects at zero applied field in ballistic nanocontacts." Physical review letters vol. 110,6 (2013): 067203. doi: https://doi.org/10.1103/PhysRevLett.110.067203
von Bieren A, Patra AK, Krzyk S, Rhensius J, Reeve RM, Heyderman LJ, Hoffmann-Vogel R, Kläui M. Domain-wall induced large magnetoresistance effects at zero applied field in ballistic nanocontacts. Phys Rev Lett. 2013 Feb 08;110(6):067203. doi: 10.1103/PhysRevLett.110.067203. Epub 2013 Feb 07. PMID: 23432298.
Copy Download .nbib Format: NLM
Share it on

Phys Rev Lett. 2013 Feb 08;110(6):067203. doi: 10.1103/PhysRevLett.110.067203. Epub 2013 Feb 07.

Domain-wall induced large magnetoresistance effects at zero applied field in ballistic nanocontacts.

Physical review letters

Arndt von Bieren, Ajit K Patra, Stephen Krzyk, Jan Rhensius, Robert M Reeve, Laura J Heyderman, Regina Hoffmann-Vogel, Mathias Kläui

Affiliations

  1. Laboratory for Nanomagnetism and Spin Dynamics, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.

PMID: 23432298 DOI: 10.1103/PhysRevLett.110.067203

Abstract

We determine magnetoresistance effects in stable and clean Permalloy nanocontacts of variable cross section, fabricated by UHV deposition and in situ electromigration. To ascertain the magnetoresistance (MR) effects originating from a magnetic domain wall, we measure the resistance values with and without such a wall at zero applied field. In the ballistic transport regime, the MR ratio reaches up to 50% and exhibits a previously unobserved sign change. Our results can be reproduced by recent atomistic calculations for different atomic configurations of the nanocontact, highlighting the importance of the detailed atomic arrangement for the MR effect.

Publication Types