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Phys Rev Lett. 2013 Apr 26;110(17):176801. doi: 10.1103/PhysRevLett.110.176801. Epub 2013 Apr 22.

Quantum Hall effect in hydrogenated graphene.

Physical review letters

J Guillemette, S S Sabri, Binxin Wu, K Bennaceur, P E Gaskell, M Savard, P L Lévesque, F Mahvash, A Guermoune, M Siaj, R Martel, T Szkopek, G Gervais

Affiliations

  1. Department of Physics, McGill University, Montréal, Quebec, H3A 2T8, Canada.

PMID: 23679754 DOI: 10.1103/PhysRevLett.110.176801

Abstract

The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10  cm2/V·s and corresponding Ioffe-Regel disorder parameter (k(F)λ)(-1) ≫ 1. In a zero magnetic field and low temperatures, the hydrogenated graphene is insulating with a two-point resistance of the order of 250h/e2. The application of a strong magnetic field generates a negative colossal magnetoresistance, with the two-point resistance saturating within 0.5% of h/2e2 at 45 T. Our observations are consistent with the opening of an impurity-induced gap in the density of states of graphene. The interplay between electron localization by defect scattering and magnetic confinement in two-dimensional atomic crystals is discussed.

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