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Zoolfakar AS, Ab Kadir R, Rani RA, et al. Engineering electrodeposited ZnO films and their memristive switching performance. Phys Chem Chem Phys. 2013;15(25):10376-84doi: 10.1039/c3cp44451a.
Zoolfakar, A. S., Ab Kadir, R., Rani, R. A., Balendhran, S., Liu, X., Kats, E., Bhargava, S. K., Bhaskaran, M., Sriram, S., Zhuiykov, S., O'Mullane, A. P., & Kalantar-Zadeh, K. (2013). Engineering electrodeposited ZnO films and their memristive switching performance. Physical chemistry chemical physics : PCCP, 15(25), 10376-84. https://doi.org/10.1039/c3cp44451a
Zoolfakar, Ahmad Sabirin, et al. "Engineering electrodeposited ZnO films and their memristive switching performance." Physical chemistry chemical physics : PCCP vol. 15,25 (2013): 10376-84. doi: https://doi.org/10.1039/c3cp44451a
Zoolfakar AS, Ab Kadir R, Rani RA, Balendhran S, Liu X, Kats E, Bhargava SK, Bhaskaran M, Sriram S, Zhuiykov S, O'Mullane AP, Kalantar-Zadeh K. Engineering electrodeposited ZnO films and their memristive switching performance. Phys Chem Chem Phys. 2013 Jul 07;15(25):10376-84. doi: 10.1039/c3cp44451a. Epub 2013 May 16. PMID: 23680815.
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Phys Chem Chem Phys. 2013 Jul 07;15(25):10376-84. doi: 10.1039/c3cp44451a. Epub 2013 May 16.

Engineering electrodeposited ZnO films and their memristive switching performance.

Physical chemistry chemical physics : PCCP

Ahmad Sabirin Zoolfakar, Rosmalini Ab Kadir, Rozina Abdul Rani, Sivacarendran Balendhran, Xinjun Liu, Eugene Kats, Suresh K Bhargava, Madhu Bhaskaran, Sharath Sriram, Serge Zhuiykov, Anthony P O'Mullane, Kourosh Kalantar-Zadeh

Affiliations

  1. School of Electrical and Computer Engineering, RMIT University, Melbourne, VIC 3001, Australia. [email protected]

PMID: 23680815 DOI: 10.1039/c3cp44451a

Abstract

We report the influence of zinc oxide (ZnO) seed layers on the performance of ZnO-based memristive devices fabricated using an electrodeposition approach. The memristive element is based on a sandwich structure using Ag and Pt electrodes. The ZnO seed layer is employed to tune the morphology of the electrodeposited ZnO films in order to increase the grain boundary density as well as construct highly ordered arrangements of grain boundaries. Additionally, the seed layer also assists in optimizing the concentration of oxygen vacancies in the films. The fabricated devices exhibit memristive switching behaviour with symmetrical and asymmetrical hysteresis loops in the absence and presence of ZnO seed layers, respectively. A modest concentration of oxygen vacancy in electrodeposited ZnO films as well as an increase in the ordered arrangement of grain boundaries leads to higher switching ratios in Ag/ZnO/Pt devices.

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