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Cheong LL, Paul P, Holzner F, et al. Thermal probe maskless lithography for 27.5 nm half-pitch Si technology. Nano Lett. 2013;13(9):4485-91doi: 10.1021/nl4024066.
Cheong, L. L., Paul, P., Holzner, F., Despont, M., Coady, D. J., Hedrick, J. L., Allen, R., Knoll, A. W., & Duerig, U. (2013). Thermal probe maskless lithography for 27.5 nm half-pitch Si technology. Nano letters, 13(9), 4485-91. https://doi.org/10.1021/nl4024066
Cheong, Lin Lee, et al. "Thermal probe maskless lithography for 27.5 nm half-pitch Si technology." Nano letters vol. 13,9 (2013): 4485-91. doi: https://doi.org/10.1021/nl4024066
Cheong LL, Paul P, Holzner F, Despont M, Coady DJ, Hedrick JL, Allen R, Knoll AW, Duerig U. Thermal probe maskless lithography for 27.5 nm half-pitch Si technology. Nano Lett. 2013 Sep 11;13(9):4485-91. doi: 10.1021/nl4024066. Epub 2013 Aug 23. PMID: 23965001.
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Nano Lett. 2013 Sep 11;13(9):4485-91. doi: 10.1021/nl4024066. Epub 2013 Aug 23.

Thermal probe maskless lithography for 27.5 nm half-pitch Si technology.

Nano letters

Lin Lee Cheong, Philip Paul, Felix Holzner, Michel Despont, Daniel J Coady, James L Hedrick, Robert Allen, Armin W Knoll, Urs Duerig

Affiliations

  1. IBM Research-Zurich , Säumerstrasse 4, CH-8803 Rüschlikon, Switzerland.

PMID: 23965001 DOI: 10.1021/nl4024066

Abstract

Thermal scanning probe lithography is used for creating lithographic patterns with 27.5 nm half-pitch line density in a 50 nm thick high carbon content organic resist on a Si substrate. The as-written patterns in the poly phthaladehyde thermal resist layer have a depth of 8 nm, and they are transformed into high-aspect ratio binary patterns in the high carbon content resist using a SiO2 hard-mask layer with a thickness of merely 4 nm and a sequence of selective reactive ion etching steps. Using this process, a line-edge roughness after transfer of 2.7 nm (3σ) has been achieved. The patterns have also been transferred into 50 nm deep structures in the Si substrate with excellent conformal accuracy. The demonstrated process capabilities in terms of feature density and line-edge roughness are in accordance with today's requirements for maskless lithography, for example for the fabrication of extreme ultraviolet (EUV) masks.

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