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Prakash A, Maikap S, Chiu HC, et al. Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface. Nanoscale Res Lett. 2013;8(1):419doi: 10.1186/1556-276X-8-419.
Prakash, A., Maikap, S., Chiu, H. C., Tien, T. C., & Lai, C. S. (2013). Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface. Nanoscale research letters, 8(1), 419. https://doi.org/10.1186/1556-276X-8-419
Prakash, Amit, et al. "Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface." Nanoscale research letters vol. 8,1 (2013): 419. doi: https://doi.org/10.1186/1556-276X-8-419
Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS. Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface. Nanoscale Res Lett. 2013 Oct 22;8(1):419. doi: 10.1186/1556-276X-8-419. PMID: 24229327; PMCID: PMC3853228.
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Nanoscale Res Lett. 2013 Oct 22;8(1):419. doi: 10.1186/1556-276X-8-419.

Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface.

Nanoscale research letters

Amit Prakash, Siddheswar Maikap, Hsien-Chin Chiu, Ta-Chang Tien, Chao-Sung Lai

PMID: 24229327 PMCID: PMC3853228 DOI: 10.1186/1556-276X-8-419

[No abstract available.]

References

  1. Nanoscale Res Lett. 2013 Oct 22;8(1):419 - PubMed

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