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Berski F, Kuhn H, Lonnemann JG, et al. Ultrahigh bandwidth spin noise spectroscopy: detection of large g-factor fluctuations in highly-n-doped GaAs. Phys Rev Lett. 2013;111(18):186602doi: 10.1103/PhysRevLett.111.186602.
Berski, F., Kuhn, H., Lonnemann, J. G., Hübner, J., & Oestreich, M. (2013). Ultrahigh bandwidth spin noise spectroscopy: detection of large g-factor fluctuations in highly-n-doped GaAs. Physical review letters, 111(18), 186602. https://doi.org/10.1103/PhysRevLett.111.186602
Berski, Fabian, et al. "Ultrahigh bandwidth spin noise spectroscopy: detection of large g-factor fluctuations in highly-n-doped GaAs." Physical review letters vol. 111,18 (2013): 186602. doi: https://doi.org/10.1103/PhysRevLett.111.186602
Berski F, Kuhn H, Lonnemann JG, Hübner J, Oestreich M. Ultrahigh bandwidth spin noise spectroscopy: detection of large g-factor fluctuations in highly-n-doped GaAs. Phys Rev Lett. 2013 Nov 01;111(18):186602. doi: 10.1103/PhysRevLett.111.186602. Epub 2013 Oct 29. PMID: 24237545.
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Phys Rev Lett. 2013 Nov 01;111(18):186602. doi: 10.1103/PhysRevLett.111.186602. Epub 2013 Oct 29.

Ultrahigh bandwidth spin noise spectroscopy: detection of large g-factor fluctuations in highly-n-doped GaAs.

Physical review letters

Fabian Berski, Hendrik Kuhn, Jan G Lonnemann, Jens Hübner, Michael Oestreich

Affiliations

  1. Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstraße 2, D-30167 Hannover, Germany.

PMID: 24237545 DOI: 10.1103/PhysRevLett.111.186602

Abstract

We advance all optical spin noise spectroscopy (SNS) in semiconductors to detection bandwidths of several hundred gigahertz by employing a sophisticated scheme of pulse trains from ultrafast laser oscillators as an optical probe. The ultrafast SNS technique avoids the need for optical pumping and enables nearly perturbation free measurements of extremely short spin dephasing times. We apply the technique to highly-n-doped bulk GaAs where magnetic field dependent measurements show unexpected large g-factor fluctuations. Calculations suggest that such large g-factor fluctuations do not necessarily result from extrinsic sample variations but are intrinsically present in every doped semiconductor due to the stochastic nature of the dopant distribution.

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