Display options
Cite
Mazur YI, Dorogan VG, de Souza LD, et al. Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix/GaAs heterostructures. Nanotechnology. 2013;25(3):035702doi: 10.1088/0957-4484/25/3/035702.
Mazur, Y. I., Dorogan, V. G., de Souza, L. D., Fan, D., Benamara, M., Schmidbauer, M., Ware, M. E., Tarasov, G. G., Yu, S. Q., Marques, G. E., & Salamo, G. J. (2014). Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix/GaAs heterostructures. Nanotechnology, 25(3), 035702. https://doi.org/10.1088/0957-4484/25/3/035702
Mazur, Yu I, et al. "Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix/GaAs heterostructures." Nanotechnology vol. 25,3 (2014): 035702. doi: https://doi.org/10.1088/0957-4484/25/3/035702
Mazur YI, Dorogan VG, de Souza LD, Fan D, Benamara M, Schmidbauer M, Ware ME, Tarasov GG, Yu SQ, Marques GE, Salamo GJ. Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix/GaAs heterostructures. Nanotechnology. 2014 Jan 24;25(3):035702. doi: 10.1088/0957-4484/25/3/035702. Epub 2013 Dec 17. PMID: 24346504.
Copy Download .nbib Format: NLM
Share it on

Nanotechnology. 2014 Jan 24;25(3):035702. doi: 10.1088/0957-4484/25/3/035702. Epub 2013 Dec 17.

Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix/GaAs heterostructures.

Nanotechnology

Yu I Mazur, V G Dorogan, L D de Souza, D Fan, M Benamara, M Schmidbauer, M E Ware, G G Tarasov, S-Q Yu, G E Marques, G J Salamo

Affiliations

  1. Institute for Nanoscience and Engineering, University of Arkansas, 731 W Dickson Street, Fayetteville, AR 72701, USA.

PMID: 24346504 DOI: 10.1088/0957-4484/25/3/035702

Abstract

The structural and optical properties of GaAs1-xBix quantum wells (QWs) symmetrically clad by GaAs barriers with and without additional confining AlGaAs layers are studied. It is shown that a GaAs/GaAs1-xBix/GaAs QW with x ~ 4% and well width of ~ 4 nm grown by molecular beam epitaxy demonstrates efficient photoluminescence (PL) that becomes significantly more thermally stable when a cladding AlGaAs layer is added to the QW structure. The PL behavior for temperatures between 10 and 300 K and for excitation intensities varying by seven orders of magnitude can be well described in terms of the dynamics of excitons including carrier capture in the QW layer, thermal emission and diffusion into the cladding barriers. Understanding the role of these processes in the luminescence of dilute GaAs1-xBix QW structures facilitates the creation of highly efficient devices with reduced thermal sensitivity and low threshold current.

Publication Types