Display options
Cite
Heurlin M, Hultin O, Storm K, et al. Synthesis of doped InP core-shell nanowires evaluated using hall effect measurements. Nano Lett. 2014;14(2):749-53doi: 10.1021/nl404039d.
Heurlin, M., Hultin, O., Storm, K., Lindgren, D., Borgström, M. T., & Samuelson, L. (2014). Synthesis of doped InP core-shell nanowires evaluated using hall effect measurements. Nano letters, 14(2), 749-53. https://doi.org/10.1021/nl404039d
Heurlin, Magnus, et al. "Synthesis of doped InP core-shell nanowires evaluated using hall effect measurements." Nano letters vol. 14,2 (2014): 749-53. doi: https://doi.org/10.1021/nl404039d
Heurlin M, Hultin O, Storm K, Lindgren D, Borgström MT, Samuelson L. Synthesis of doped InP core-shell nanowires evaluated using hall effect measurements. Nano Lett. 2014 Feb 12;14(2):749-53. doi: 10.1021/nl404039d. Epub 2014 Jan 13. PMID: 24382163.
Copy Download .nbib Format: NLM
Share it on

Nano Lett. 2014 Feb 12;14(2):749-53. doi: 10.1021/nl404039d. Epub 2014 Jan 13.

Synthesis of doped InP core-shell nanowires evaluated using hall effect measurements.

Nano letters

Magnus Heurlin, Olof Hultin, Kristian Storm, David Lindgren, Magnus T Borgström, Lars Samuelson

Affiliations

  1. Division of Solid State Physics, Lund University , Box 118, 22100 Lund, Sweden.

PMID: 24382163 DOI: 10.1021/nl404039d

Abstract

InP core-shell nanowire pn-junctions doped with Zn and Sn have been investigated in terms of growth morphology and shell carrier concentration. The carrier concentrations were evaluated using spatially resolved Hall effect measurements and show improved homogeneity compared to previous investigations, attributed to the use of Sn as the n-type dopant. Anisotropies in the growth rate of different facets are found for different doping levels that in turn affects the migration of Sn and In on the nanowire surface. A route for increasing the In migration length to obtain a more homogeneous shell thickness is presented.

Publication Types