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Chang KC, Huang JW, Chang TC, et al. Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer. Nanoscale Res Lett. 2013;8(1):523doi: 10.1186/1556-276X-8-523.
Chang, K. C., Huang, J. W., Chang, T. C., Tsai, T. M., Chen, K. H., Young, T. F., Chen, J. H., Zhang, R., Lou, J. C., Huang, S. Y., Pan, Y. C., Huang, H. C., Syu, Y. E., Gan, D. S., Bao, D. H., & Sze, S. M. (2013). Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer. Nanoscale research letters, 8(1), 523. https://doi.org/10.1186/1556-276X-8-523
Chang, Kuan-Chang, et al. "Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer." Nanoscale research letters vol. 8,1 (2013): 523. doi: https://doi.org/10.1186/1556-276X-8-523
Chang KC, Huang JW, Chang TC, Tsai TM, Chen KH, Young TF, Chen JH, Zhang R, Lou JC, Huang SY, Pan YC, Huang HC, Syu YE, Gan DS, Bao DH, Sze SM. Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer. Nanoscale Res Lett. 2013 Dec 11;8(1):523. doi: 10.1186/1556-276X-8-523. PMID: 24330524; PMCID: PMC3881491.
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Nanoscale Res Lett. 2013 Dec 11;8(1):523. doi: 10.1186/1556-276X-8-523.

Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer.

Nanoscale research letters

Kuan-Chang Chang, Jen-Wei Huang, Ting-Chang Chang, Tsung-Ming Tsai, Kai-Huang Chen, Tai-Fa Young, Jung-Hui Chen, Rui Zhang, Jen-Chung Lou, Syuan-Yong Huang, Yin-Chih Pan, Hui-Chun Huang, Yong-En Syu, Der-Shin Gan, Ding-Hua Bao, Simon M Sze

Affiliations

  1. Department of Physics, R,O,C, Military Academy, Kaohsiung, Taiwan. [email protected].

PMID: 24330524 PMCID: PMC3881491 DOI: 10.1186/1556-276X-8-523

Abstract

To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 thin films were analyzed and discussed. In addition, the original space charge limited current (SCLC) conduction mechanism in LRS and HRS of the RRAM devices using bilayer Zr:SiO2/porous SiO2 thin films was found. Finally, a space electric field concentrated effect in the bilayer Zr:SiO2/porous SiO2 RRAM devices was also explained and verified by the COMSOL Multiphysics simulation model.

References

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