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Matheisen C, Waldow M, Chmielak B, et al. Electro-optic light modulation and THz generation in locally plasma-activated silicon nanophotonic devices. Opt Express. 2014;22(5):5252-9doi: 10.1364/OE.22.005252.
Matheisen, C., Waldow, M., Chmielak, B., Sawallich, S., Wahlbrink, T., Bolten, J., Nagel, M., & Kurz, H. (2014). Electro-optic light modulation and THz generation in locally plasma-activated silicon nanophotonic devices. Optics express, 22(5), 5252-9. https://doi.org/10.1364/OE.22.005252
Matheisen, Christopher, et al. "Electro-optic light modulation and THz generation in locally plasma-activated silicon nanophotonic devices." Optics express vol. 22,5 (2014): 5252-9. doi: https://doi.org/10.1364/OE.22.005252
Matheisen C, Waldow M, Chmielak B, Sawallich S, Wahlbrink T, Bolten J, Nagel M, Kurz H. Electro-optic light modulation and THz generation in locally plasma-activated silicon nanophotonic devices. Opt Express. 2014 Mar 10;22(5):5252-9. doi: 10.1364/OE.22.005252. PMID: 24663865.
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Opt Express. 2014 Mar 10;22(5):5252-9. doi: 10.1364/OE.22.005252.

Electro-optic light modulation and THz generation in locally plasma-activated silicon nanophotonic devices.

Optics express

Christopher Matheisen, Michael Waldow, Bartos Chmielak, Simon Sawallich, Thorsten Wahlbrink, Jens Bolten, Michael Nagel, Heinrich Kurz

PMID: 24663865 DOI: 10.1364/OE.22.005252

Abstract

Silicon is not an electro-optic material by itself but the required second-order optical nonlinearity can be induced by breaking the inversion symmetry of the crystal lattice. Recently, an attractive approach has been demonstrated based on a surface-activation in a CMOS-compatible HBr dry etching process. In this work, we further investigate and quantify the second-order nonlinearity induced by this process. Using THz near-field probing we demonstrate that this simple and versatile process can be applied to locally equip silicon nanophotonic chips with micro-scale areas of electro-optic activity. The realization of a first fully integrated Mach-Zehnder modulator device - based on this process - is applied to quantify the nonlinearity to an effective χ((2)) of 9 ± 1 pm/V. Analysis of the thermal stability of the induced nonlinearity reveals post-processing limitations and paths for further efficiency improvements.

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