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Lee JH, Lee EK, Joo WJ, et al. Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium. Science. 2014;344(6181):286-9doi: 10.1126/science.1252268.
Lee, J. H., Lee, E. K., Joo, W. J., Jang, Y., Kim, B. S., Lim, J. Y., Choi, S. H., Ahn, S. J., Ahn, J. R., Park, M. H., Yang, C. W., Choi, B. L., Hwang, S. W., & Whang, D. (2014). Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium. Science (New York, N.Y.), 344(6181), 286-9. https://doi.org/10.1126/science.1252268
Lee, Jae-Hyun, et al. "Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium." Science (New York, N.Y.) vol. 344,6181 (2014): 286-9. doi: https://doi.org/10.1126/science.1252268
Lee JH, Lee EK, Joo WJ, Jang Y, Kim BS, Lim JY, Choi SH, Ahn SJ, Ahn JR, Park MH, Yang CW, Choi BL, Hwang SW, Whang D. Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium. Science. 2014 Apr 18;344(6181):286-9. doi: 10.1126/science.1252268. Epub 2014 Apr 03. PMID: 24700471.
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Science. 2014 Apr 18;344(6181):286-9. doi: 10.1126/science.1252268. Epub 2014 Apr 03.

Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium.

Science (New York, N.Y.)

Jae-Hyun Lee, Eun Kyung Lee, Won-Jae Joo, Yamujin Jang, Byung-Sung Kim, Jae Young Lim, Soon-Hyung Choi, Sung Joon Ahn, Joung Real Ahn, Min-Ho Park, Cheol-Woong Yang, Byoung Lyong Choi, Sung-Woo Hwang, Dongmok Whang

Affiliations

  1. SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon 440-746, Korea.

PMID: 24700471 DOI: 10.1126/science.1252268

Abstract

The uniform growth of single-crystal graphene over wafer-scale areas remains a challenge in the commercial-level manufacturability of various electronic, photonic, mechanical, and other devices based on graphene. Here, we describe wafer-scale growth of wrinkle-free single-crystal monolayer graphene on silicon wafer using a hydrogen-terminated germanium buffer layer. The anisotropic twofold symmetry of the germanium (110) surface allowed unidirectional alignment of multiple seeds, which were merged to uniform single-crystal graphene with predefined orientation. Furthermore, the weak interaction between graphene and underlying hydrogen-terminated germanium surface enabled the facile etch-free dry transfer of graphene and the recycling of the germanium substrate for continual graphene growth.

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