Display options
Cite
Shashkin AA, Dolgopolov VT, Clark JW, et al. Merging of Landau levels in a strongly interacting two-dimensional electron system in silicon. Phys Rev Lett. 2014;112(18):186402doi: 10.1103/PhysRevLett.112.186402.
Shashkin, A. A., Dolgopolov, V. T., Clark, J. W., Shaginyan, V. R., Zverev, M. V., & Khodel, V. A. (2014). Merging of Landau levels in a strongly interacting two-dimensional electron system in silicon. Physical review letters, 112(18), 186402. https://doi.org/10.1103/PhysRevLett.112.186402
Shashkin, A A, et al. "Merging of Landau levels in a strongly interacting two-dimensional electron system in silicon." Physical review letters vol. 112,18 (2014): 186402. doi: https://doi.org/10.1103/PhysRevLett.112.186402
Shashkin AA, Dolgopolov VT, Clark JW, Shaginyan VR, Zverev MV, Khodel VA. Merging of Landau levels in a strongly interacting two-dimensional electron system in silicon. Phys Rev Lett. 2014 May 09;112(18):186402. doi: 10.1103/PhysRevLett.112.186402. Epub 2014 May 08. PMID: 24856708.
Copy Download .nbib Format: NLM
Share it on

Phys Rev Lett. 2014 May 09;112(18):186402. doi: 10.1103/PhysRevLett.112.186402. Epub 2014 May 08.

Merging of Landau levels in a strongly interacting two-dimensional electron system in silicon.

Physical review letters

A A Shashkin, V T Dolgopolov, J W Clark, V R Shaginyan, M V Zverev, V A Khodel

Affiliations

  1. Institute of Solid State Physics, Chernogolovka, Moscow District 142432, Russia.
  2. Institute of Solid State Physics, Chernogolovka, Moscow District 142432, Russia and Moscow Institute of Physics and Technology, Dolgoprudny, Moscow District 141700, Russia.
  3. McDonnell Center for the Space Sciences & Department of Physics, Washington University, Saint Louis, Missouri 63130, USA.
  4. Petersburg Nuclear Physics Institute, NRC Kurchatov Institute, Gatchina 188300, Russia and Clark Atlanta University, Atlanta, Georgia 30314, USA.
  5. Moscow Institute of Physics and Technology, Dolgoprudny, Moscow District 141700, Russia and NRC Kurchatov Institute, Moscow 123182, Russia.
  6. NRC Kurchatov Institute, Moscow 123182, Russia.

PMID: 24856708 DOI: 10.1103/PhysRevLett.112.186402

Abstract

We show that the merging of the spin- and valley-split Landau levels at the chemical potential is an intrinsic property of a strongly interacting two-dimensional electron system in silicon. Evidence for the level merging is given by available experimental data.

Publication Types