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Plasmonics. 2014;9:545-551. doi: 10.1007/s11468-013-9658-z. Epub 2013 Dec 28.

Ultrafast Optical Properties of Dense Electron Gas in Silicon Nanostructures.

Plasmonics (Norwell, Mass.)

A Sieradzki, M Basta, P Scharoch, J-Y Bigot

Affiliations

  1. Institute of Physics, Wroc?aw University of Technology, Wybrze?e Wyspia?skiego 27, 50-370 Wroclaw, Poland ; Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, CNRS, Université de Strasbourg, BP 43, 23 rue du Loess, 67034 Strasbourg Cedex 02, France.
  2. Department of Nanotechnology, Wroclaw Research Centre EiT+, ul Stab?owicka 147, 54-066 Wroc?aw, Poland.
  3. Institute of Physics, Wroc?aw University of Technology, Wybrze?e Wyspia?skiego 27, 50-370 Wroclaw, Poland.
  4. Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, CNRS, Université de Strasbourg, BP 43, 23 rue du Loess, 67034 Strasbourg Cedex 02, France.

PMID: 24834018 PMCID: PMC4018487 DOI: 10.1007/s11468-013-9658-z

Abstract

We investigate the ultrafast dynamics of carriers in a silicon nanostructure by performing spectrally resolved femtosecond spectroscopy measurements with a supercontinuum probe. The nanostructure consists of a 158-nm-thick crystalline Si layer on top of which a SiO

Keywords: Carrier dynamics; Electron–hole plasma; Pump–probe spectroscopy; Silicon nanostructure

References

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