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Bowers CM, Liao KC, Yoon HJ, et al. Introducing ionic and/or hydrogen bonds into the SAM//Ga2O3 top-interface of Ag(TS)/S(CH2)nT//Ga2O3/EGaIn junctions. Nano Lett. 2014;14(6):3521-6doi: 10.1021/nl501126e.
Bowers, C. M., Liao, K. C., Yoon, H. J., Rappoport, D., Baghbanzadeh, M., Simeone, F. C., & Whitesides, G. M. (2014). Introducing ionic and/or hydrogen bonds into the SAM//Ga2O3 top-interface of Ag(TS)/S(CH2)nT//Ga2O3/EGaIn junctions. Nano letters, 14(6), 3521-6. https://doi.org/10.1021/nl501126e
Bowers, Carleen M, et al. "Introducing ionic and/or hydrogen bonds into the SAM//Ga2O3 top-interface of Ag(TS)/S(CH2)nT//Ga2O3/EGaIn junctions." Nano letters vol. 14,6 (2014): 3521-6. doi: https://doi.org/10.1021/nl501126e
Bowers CM, Liao KC, Yoon HJ, Rappoport D, Baghbanzadeh M, Simeone FC, Whitesides GM. Introducing ionic and/or hydrogen bonds into the SAM//Ga2O3 top-interface of Ag(TS)/S(CH2)nT//Ga2O3/EGaIn junctions. Nano Lett. 2014 Jun 11;14(6):3521-6. doi: 10.1021/nl501126e. Epub 2014 Jun 02. PMID: 24840009.
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Nano Lett. 2014 Jun 11;14(6):3521-6. doi: 10.1021/nl501126e. Epub 2014 Jun 02.

Introducing ionic and/or hydrogen bonds into the SAM//Ga2O3 top-interface of Ag(TS)/S(CH2)nT//Ga2O3/EGaIn junctions.

Nano letters

Carleen M Bowers, Kung-Ching Liao, Hyo Jae Yoon, Dmitrij Rappoport, Mostafa Baghbanzadeh, Felice C Simeone, George M Whitesides

Affiliations

  1. Department of Chemistry and Chemical Biology, Harvard University , 12 Oxford Street, Cambridge, Massachusetts 02138, United States.

PMID: 24840009 DOI: 10.1021/nl501126e

Abstract

Junctions with the structure Ag(TS)/S(CH2)nT//Ga2O3/EGaIn (where S(CH2)nT is a self-assembled monolayer, SAM, of n-alkanethiolate bearing a terminal functional group T) make it possible to examine the response of rates of charge transport by tunneling to changes in the strength of the interaction between T and Ga2O3. Introducing a series of Lewis acidic/basic functional groups (T = -OH, -SH, -CO2H, -CONH2, and -PO3H) at the terminus of the SAM gave values for the tunneling current density, J(V) in A/cm(2), that were indistinguishable (i.e., differed by less than a factor of 3) from the values observed with n-alkanethiolates of equivalent length. The insensitivity of the rate of tunneling to changes in the terminal functional group implies that replacing weak van der Waals contact interactions with stronger hydrogen- or ionic bonds at the T//Ga2O3 interface does not change the shape (i.e., the height or width) of the tunneling barrier enough to affect rates of charge transport. A comparison of the injection current, J0, for T = -CO2H, and T = -CH2CH3--two groups having similar extended lengths (in Å, or in numbers of non-hydrogen atoms)--suggests that both groups make indistinguishable contributions to the height of the tunneling barrier.

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