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Sci Rep. 2014 May 21;4:5021. doi: 10.1038/srep05021.

Probing the role of an atomically thin SiNx interlayer on the structure of ultrathin carbon films.

Scientific reports

Neeraj Dwivedi, Ehsan Rismani-Yazdi, Reuben J Yeo, Partho S Goohpattader, Nalam Satyanarayana, Narasimhan Srinivasan, Boris Druz, S Tripathy, C S Bhatia

Affiliations

  1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583.
  2. Veeco Instruments Inc, Terminal Drive Plainview, New York 11803, United States.
  3. Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology, and Research), 3 Research Link, Singapore 117602.

PMID: 24846506 PMCID: PMC4028925 DOI: 10.1038/srep05021

Abstract

Filtered cathodic vacuum arc (FCVA) processed carbon films are being considered as a promising protective media overcoat material for future hard disk drives (HDDs). However, at ultrathin film levels, FCVA-deposited carbon films show a dramatic change in their structure in terms of loss of sp3 bonding, density, wear resistance etc., compared to their bulk counterpart. We report for the first time how an atomically thin (0.4 nm) silicon nitride (SiNx) interlayer helps in maintaining/improving the sp3 carbon bonding, enhancing interfacial strength/bonding, improving oxidation/corrosion resistance, and strengthening the tribological properties of FCVA-deposited carbon films, even at ultrathin levels (1.2 nm). We propose the role of the SiNx interlayer in preventing the catalytic activity of Co and Pt in media, leading to enhanced sp3C bonding (relative enhancement~40%). These findings are extremely important in view of the atomic level understanding of structural modification and the development of high density HDDs.

References

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