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Hu S, Shaner MR, Beardslee JA, et al. Amorphous TiO₂ coatings stabilize Si, GaAs, and GaP photoanodes for efficient water oxidation. Science. 2014;344(6187):1005-9doi: 10.1126/science.1251428.
Hu, S., Shaner, M. R., Beardslee, J. A., Lichterman, M., Brunschwig, B. S., & Lewis, N. S. (2014). Amorphous TiO₂ coatings stabilize Si, GaAs, and GaP photoanodes for efficient water oxidation. Science (New York, N.Y.), 344(6187), 1005-9. https://doi.org/10.1126/science.1251428
Hu, Shu, et al. "Amorphous TiO₂ coatings stabilize Si, GaAs, and GaP photoanodes for efficient water oxidation." Science (New York, N.Y.) vol. 344,6187 (2014): 1005-9. doi: https://doi.org/10.1126/science.1251428
Hu S, Shaner MR, Beardslee JA, Lichterman M, Brunschwig BS, Lewis NS. Amorphous TiO₂ coatings stabilize Si, GaAs, and GaP photoanodes for efficient water oxidation. Science. 2014 May 30;344(6187):1005-9. doi: 10.1126/science.1251428. PMID: 24876492.
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Science. 2014 May 30;344(6187):1005-9. doi: 10.1126/science.1251428.

Amorphous TiO₂ coatings stabilize Si, GaAs, and GaP photoanodes for efficient water oxidation.

Science (New York, N.Y.)

Shu Hu, Matthew R Shaner, Joseph A Beardslee, Michael Lichterman, Bruce S Brunschwig, Nathan S Lewis

Affiliations

  1. Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, CA 91125, USA. Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125, USA.
  2. Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, CA 91125, USA.
  3. Beckman Institute and Molecular Materials Research Center, California Institute of Technology, Pasadena, CA 91125, USA.
  4. Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, CA 91125, USA. Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125, USA. Beckman Institute and Molecular Materials Research Center, California Institute of Technology, Pasadena, CA 91125, USA. Kavli Nanoscience Institute, California Institute of Technology, Pasadena, CA 91125, USA. [email protected].

PMID: 24876492 DOI: 10.1126/science.1251428

Abstract

Although semiconductors such as silicon (Si), gallium arsenide (GaAs), and gallium phosphide (GaP) have band gaps that make them efficient photoanodes for solar fuel production, these materials are unstable in aqueous media. We show that TiO2 coatings (4 to 143 nanometers thick) grown by atomic layer deposition prevent corrosion, have electronic defects that promote hole conduction, and are sufficiently transparent to reach the light-limited performance of protected semiconductors. In conjunction with a thin layer or islands of Ni oxide electrocatalysts, Si photoanodes exhibited continuous oxidation of 1.0 molar aqueous KOH to O2 for more than 100 hours at photocurrent densities of >30 milliamperes per square centimeter and ~100% Faradaic efficiency. TiO2-coated GaAs and GaP photoelectrodes exhibited photovoltages of 0.81 and 0.59 V and light-limiting photocurrent densities of 14.3 and 3.4 milliamperes per square centimeter, respectively, for water oxidation.

Copyright © 2014, American Association for the Advancement of Science.

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