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Dong J, Liu J, Kang G, et al. Pushing the resolution of photolithography down to 15nm by surface plasmon interference. Sci Rep. 2014;4:5618doi: 10.1038/srep05618.
Dong, J., Liu, J., Kang, G., Xie, J., & Wang, Y. (2014). Pushing the resolution of photolithography down to 15nm by surface plasmon interference. Scientific reports, 45618. https://doi.org/10.1038/srep05618
Dong, Jianjie, et al. "Pushing the resolution of photolithography down to 15nm by surface plasmon interference." Scientific reports vol. 4 (2014): 5618. doi: https://doi.org/10.1038/srep05618
Dong J, Liu J, Kang G, Xie J, Wang Y. Pushing the resolution of photolithography down to 15nm by surface plasmon interference. Sci Rep. 2014 Jul 08;4:5618. doi: 10.1038/srep05618. PMID: 25001238; PMCID: PMC4085591.
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Sci Rep. 2014 Jul 08;4:5618. doi: 10.1038/srep05618.

Pushing the resolution of photolithography down to 15nm by surface plasmon interference.

Scientific reports

Jianjie Dong, Juan Liu, Guoguo Kang, Jinghui Xie, Yongtian Wang

Affiliations

  1. School of Optoelectronics, Beijing Institute of Technology, Beijing 100081, China.

PMID: 25001238 PMCID: PMC4085591 DOI: 10.1038/srep05618

Abstract

A deep ultraviolet plasmonic structure is designed and a surface plasmon interference lithography method using the structure is proposed to generate large-area periodic nanopatterns. By exciting the anti-symmetric coupled surface plasmon polaritons in the structure, ultrahigh resolution periodic patterns can be formed in a photoresist. The resolution of the generated patterns can be tuned by changing the refractive index and thickness of the photoresist. We demonstrate numerically that one-dimensional and two-dimensional patterns with a half-pitch resolution of 14.6 nm can be generated in a 25 nm-thick photoresist by using the structure under 193 nm illumination. Furthermore, the half-pitch resolution of the generated patterns can be down to 13 nm if high refractive index photoresists are used. Our findings open up an avenue to push the half-pitch resolution of photolithography towards 10 nm.

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