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Choi I, Jeong HY, Jung DY, et al. Laser-induced solid-phase doped graphene. ACS Nano. 2014;8(8):7671-7doi: 10.1021/nn5032214.
Choi, I., Jeong, H. Y., Jung, D. Y., Byun, M., Choi, C. G., Hong, B. H., Choi, S. Y., & Lee, K. J. (2014). Laser-induced solid-phase doped graphene. ACS nano, 8(8), 7671-7. https://doi.org/10.1021/nn5032214
Choi, Insung, et al. "Laser-induced solid-phase doped graphene." ACS nano vol. 8,8 (2014): 7671-7. doi: https://doi.org/10.1021/nn5032214
Choi I, Jeong HY, Jung DY, Byun M, Choi CG, Hong BH, Choi SY, Lee KJ. Laser-induced solid-phase doped graphene. ACS Nano. 2014 Aug 26;8(8):7671-7. doi: 10.1021/nn5032214. Epub 2014 Jul 14. PMID: 25006987.
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ACS Nano. 2014 Aug 26;8(8):7671-7. doi: 10.1021/nn5032214. Epub 2014 Jul 14.

Laser-induced solid-phase doped graphene.

ACS nano

Insung Choi, Hu Young Jeong, Dae Yool Jung, Myunghwan Byun, Choon-Gi Choi, Byung Hee Hong, Sung-Yool Choi, Keon Jae Lee

Affiliations

  1. Department of Materials Science and Engineering and ‡Department of Electrical Engineering and Graphene Research Center, Korea Advanced Institute of Science and Technology (KAIST) , Daejeon 305-701, Republic of Korea.

PMID: 25006987 DOI: 10.1021/nn5032214

Abstract

There have been numerous efforts to improve the performance of graphene-based electronic devices by chemical doping. Most studies have focused on gas-phase doping with chemical vapor deposition. However, that requires a complicated transfer process that causes undesired doping and defects by residual polymers. Here, we report a solid-phase synthesis of doped graphene by means of silicon carbide (SiC) substrate including a dopant source driven by pulsed laser irradiation. This method provides in situ direct growth of doped graphene on an insulating SiC substrate without a transfer step. A numerical simulation on the temperature history of the SiC surface during laser irradiation reveals that the surface temperature of SiC can be accurately controlled to grow nitrogen-doped graphene from the thermal decomposition of nitrogen-doped SiC. Laser-induced solid-phase doped graphene is highly promising for the realization of graphene-based nanoelectronics with desired functionalities.

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