Display options
Cite
Harish S, Tabara M, Ikoma Y, et al. Thermal conductivity reduction of crystalline silicon by high-pressure torsion. Nanoscale Res Lett. 2014;9(1):326doi: 10.1186/1556-276X-9-326.
Harish, S., Tabara, M., Ikoma, Y., Horita, Z., Takata, Y., Cahill, D. G., & Kohno, M. (2014). Thermal conductivity reduction of crystalline silicon by high-pressure torsion. Nanoscale research letters, 9(1), 326. https://doi.org/10.1186/1556-276X-9-326
Harish, Sivasankaran, et al. "Thermal conductivity reduction of crystalline silicon by high-pressure torsion." Nanoscale research letters vol. 9,1 (2014): 326. doi: https://doi.org/10.1186/1556-276X-9-326
Harish S, Tabara M, Ikoma Y, Horita Z, Takata Y, Cahill DG, Kohno M. Thermal conductivity reduction of crystalline silicon by high-pressure torsion. Nanoscale Res Lett. 2014 Jun 28;9(1):326. doi: 10.1186/1556-276X-9-326. eCollection 2014. PMID: 25024687; PMCID: PMC4084791.
Copy Download .nbib Format: NLM
Share it on

Nanoscale Res Lett. 2014 Jun 28;9(1):326. doi: 10.1186/1556-276X-9-326. eCollection 2014.

Thermal conductivity reduction of crystalline silicon by high-pressure torsion.

Nanoscale research letters

Sivasankaran Harish, Mitsuru Tabara, Yoshifumi Ikoma, Zenji Horita, Yasuyuki Takata, David G Cahill, Masamichi Kohno

Affiliations

  1. Department of Mechanical Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan.
  2. Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan.
  3. Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan ; International Institute of Carbon-Neutral Energy Research (WPI - I2CNER), Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan.
  4. Department of Mechanical Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan ; International Institute of Carbon-Neutral Energy Research (WPI - I2CNER), Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan.
  5. International Institute of Carbon-Neutral Energy Research (WPI - I2CNER), Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan ; Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana, IL 61801, USA.

PMID: 25024687 PMCID: PMC4084791 DOI: 10.1186/1556-276X-9-326

Abstract

We report a dramatic and irreversible reduction in the lattice thermal conductivity of bulk crystalline silicon when subjected to intense plastic strain under a pressure of 24 GPa using high-pressure torsion (HPT). Thermal conductivity of the HPT-processed samples were measured using picosecond time domain thermoreflectance. Thermal conductivity measurements show that the HPT-processed samples have a lattice thermal conductivity reduction by a factor of approximately 20 (from intrinsic single crystalline value of 142 Wm(-1) K(-1) to approximately 7.6 Wm(-1) K(-1)). Thermal conductivity reduction in HPT-processed silicon is attributed to the formation of nanograin boundaries and metastable Si-III/XII phases which act as phonon scattering sites, and because of a large density of lattice defects introduced by HPT processing. Annealing the samples at 873 K increases the thermal conductivity due to the reduction in the density of secondary phases and lattice defects.

Keywords: High-pressure torsion; Silicon thermal conductivity; Thermoelectrics; Time domain thermoreflectance

References

  1. Science. 2008 Jul 25;321(5888):554-7 - PubMed
  2. Nano Lett. 2008 Dec;8(12):4670-4 - PubMed
  3. Phys Rev Lett. 2009 May 15;102(19):196803 - PubMed

Publication Types