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Islam MR, Kang N, Bhanu U, et al. Tuning the electrical property via defect engineering of single layer MoS2 by oxygen plasma. Nanoscale. 2014;6(17):10033-9doi: 10.1039/c4nr02142h.
Islam, M. R., Kang, N., Bhanu, U., Paudel, H. P., Erementchouk, M., Tetard, L., Leuenberger, M. N., & Khondaker, S. I. (2014). Tuning the electrical property via defect engineering of single layer MoS2 by oxygen plasma. Nanoscale, 6(17), 10033-9. https://doi.org/10.1039/c4nr02142h
Islam, Muhammad R, et al. "Tuning the electrical property via defect engineering of single layer MoS2 by oxygen plasma." Nanoscale vol. 6,17 (2014): 10033-9. doi: https://doi.org/10.1039/c4nr02142h
Islam MR, Kang N, Bhanu U, Paudel HP, Erementchouk M, Tetard L, Leuenberger MN, Khondaker SI. Tuning the electrical property via defect engineering of single layer MoS2 by oxygen plasma. Nanoscale. 2014 Sep 07;6(17):10033-9. doi: 10.1039/c4nr02142h. PMID: 25030839.
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Nanoscale. 2014 Sep 07;6(17):10033-9. doi: 10.1039/c4nr02142h.

Tuning the electrical property via defect engineering of single layer MoS2 by oxygen plasma.

Nanoscale

Muhammad R Islam, Narae Kang, Udai Bhanu, Hari P Paudel, Mikhail Erementchouk, Laurene Tetard, Michael N Leuenberger, Saiful I Khondaker

Affiliations

  1. Nanoscience Technology Center, University of Central Florida, Orlando, Florida 32826, USA. [email protected].

PMID: 25030839 DOI: 10.1039/c4nr02142h

Abstract

We have demonstrated that the electrical property of single-layer molybdenum disulfide (MoS2) can be significantly tuned from the semiconducting to the insulating regime via controlled exposure to oxygen plasma. The mobility, on-current and resistance of single-layer MoS2 devices were varied by up to four orders of magnitude by controlling the plasma exposure time. Raman spectroscopy, X-ray photoelectron spectroscopy and density functional theory studies suggest that the significant variation of electronic properties is caused by the creation of insulating MoO3-rich disordered domains in the MoS2 sheet upon oxygen plasma exposure, leading to an exponential variation of resistance and mobility as a function of plasma exposure time. The resistance variation calculated using an effective medium model is in excellent agreement with the measurements. The simple approach described here can be used for the fabrication of tunable two-dimensional nanodevices based on MoS2 and other transition metal dichalcogenides.

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