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Appl Spectrosc. 2014;68(8):838-43. doi: 10.1366/13-07331.

Dual-wavelength Y-branch distributed Bragg reflector diode laser at 785 nanometers for shifted excitation Raman difference spectroscopy.

Applied spectroscopy

Martin Maiwald, Bernd Eppich, Jörg Fricke, Arnim Ginolas, Frank Bugge, Bernd Sumpf, Götz Erbert, Günther Tränkle

Affiliations

  1. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany.

PMID: 25061785 DOI: 10.1366/13-07331

Abstract

A dual-wavelength Y-branch distributed Bragg reflector (DBR) diode laser at 785 nm is presented as an excitation light source for shifted excitation Raman difference spectroscopy (SERDS). The monolithic device was realized with deeply etched surface DBR gratings using one-step epitaxy. An optical output power of 140 mW was obtained in continuous-wave (CW) operation for each laser cavity, with emission wavelengths of the device at 784.50 and 785.12 nm. A spectral width of the laser emission of 30 pm (0.5 cm(-1)), including 95% of optical power, was measured. The mean spectral distance of both excitation lines is 0.63 nm (10.2 cm(-1)) over the whole operating range. Raman experiments using polystyrene as the test sample and ambient light as the interference source were carried out and demonstrate the suitability of the dual-wavelength diode laser for SERDS.

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