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Eisenberg D, Ahn HS, Bard AJ. Enhanced photoelectrochemical water oxidation on bismuth vanadate by electrodeposition of amorphous titanium dioxide. J Am Chem Soc. 2014;136(40):14011-4doi: 10.1021/ja5082475.
Eisenberg, D., Ahn, H. S., & Bard, A. J. (2014). Enhanced photoelectrochemical water oxidation on bismuth vanadate by electrodeposition of amorphous titanium dioxide. Journal of the American Chemical Society, 136(40), 14011-4. https://doi.org/10.1021/ja5082475
Eisenberg, David, et al. "Enhanced photoelectrochemical water oxidation on bismuth vanadate by electrodeposition of amorphous titanium dioxide." Journal of the American Chemical Society vol. 136,40 (2014): 14011-4. doi: https://doi.org/10.1021/ja5082475
Eisenberg D, Ahn HS, Bard AJ. Enhanced photoelectrochemical water oxidation on bismuth vanadate by electrodeposition of amorphous titanium dioxide. J Am Chem Soc. 2014 Oct 08;136(40):14011-4. doi: 10.1021/ja5082475. Epub 2014 Sep 26. PMID: 25243345.
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J Am Chem Soc. 2014 Oct 08;136(40):14011-4. doi: 10.1021/ja5082475. Epub 2014 Sep 26.

Enhanced photoelectrochemical water oxidation on bismuth vanadate by electrodeposition of amorphous titanium dioxide.

Journal of the American Chemical Society

David Eisenberg, Hyun S Ahn, Allen J Bard

Affiliations

  1. Center for Electrochemistry, Department of Chemistry, The University of Texas at Austin , Austin, Texas 78712, United States.

PMID: 25243345 DOI: 10.1021/ja5082475

Abstract

n-BiVO4 is a promising semiconductor material for photoelectrochemical water oxidation. Although most thin-film syntheses yield discontinuous BiVO4 layers, back reduction of photo-oxidized products on the conductive substrate has never been considered as a possible energy loss mechanism in the material. We report that a 15 s electrodeposition of amorphous TiO2 (a-TiO2) on W:BiVO4/F:SnO2 blocks this undesired back reduction and dramatically improves the photoelectrochemical performance of the electrode. Water oxidation photocurrent increases by up to 5.5 times, and its onset potential shifts negatively by ∼500 mV. In addition to blocking solution-mediated recombination at the substrate, the a-TiO2 film-which is found to lack any photocatalytic activity in itself-is hypothesized to react with surface defects and deactivate them toward surface recombination. The proposed treatment is simple and effective, and it may easily be extended to a wide variety of thin-film photoelectrodes.

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