Display options
Cite
Virot L, Crozat P, Fédéli JM, et al. Germanium avalanche receiver for low power interconnects. Nat Commun. 2014;5:4957doi: 10.1038/ncomms5957.
Virot, L., Crozat, P., Fédéli, J. M., Hartmann, J. M., Marris-Morini, D., Cassan, E., Boeuf, F., & Vivien, L. (2014). Germanium avalanche receiver for low power interconnects. Nature communications, 54957. https://doi.org/10.1038/ncomms5957
Virot, Léopold, et al. "Germanium avalanche receiver for low power interconnects." Nature communications vol. 5 (2014): 4957. doi: https://doi.org/10.1038/ncomms5957
Virot L, Crozat P, Fédéli JM, Hartmann JM, Marris-Morini D, Cassan E, Boeuf F, Vivien L. Germanium avalanche receiver for low power interconnects. Nat Commun. 2014 Sep 18;5:4957. doi: 10.1038/ncomms5957. PMID: 25232823.
Copy Download .nbib Format: NLM
Share it on

Nat Commun. 2014 Sep 18;5:4957. doi: 10.1038/ncomms5957.

Germanium avalanche receiver for low power interconnects.

Nature communications

Léopold Virot, Paul Crozat, Jean-Marc Fédéli, Jean-Michel Hartmann, Delphine Marris-Morini, Eric Cassan, Frédéric Boeuf, Laurent Vivien

Affiliations

  1. 1] Institut d'Electronique Fondamentale (IEF), Université Paris-Sud, CNRS, Bât 220, F-91405 Orsay, France [2] CEA, LETI, Minatec Campus, 17 rue des Martyrs, F-38054 Grenoble, France [3] STMicroelectronics, Silicon Technology Development, Crolles, France.
  2. Institut d'Electronique Fondamentale (IEF), Université Paris-Sud, CNRS, Bât 220, F-91405 Orsay, France.
  3. CEA, LETI, Minatec Campus, 17 rue des Martyrs, F-38054 Grenoble, France.
  4. STMicroelectronics, Silicon Technology Development, Crolles, France.

PMID: 25232823 DOI: 10.1038/ncomms5957

Abstract

Recent advances in silicon photonics have aided the development of on-chip communications. Power consumption, however, remains an issue in almost all integrated devices. Here, we report a 10 Gbit per second waveguide avalanche germanium photodiode under low reverse bias. The avalanche photodiode scheme requires only simple technological steps that are fully compatible with complementary metal oxide semiconductor processes and do not need nanometre accuracy and/or complex epitaxial growth schemes. An intrinsic gain higher than 20 was demonstrated under a bias voltage as low as -7 V. The Q-factor relating to the signal-to-noise ratio at 10 Gbit per second was maintained over 20 dB without the use of a trans-impedance amplifier for an input optical power lower than -26 dBm thanks to an aggressive shrinkage of the germanium multiplication region. A maximum gain over 140 was also obtained for optical powers below -35 dBm. These results pave the way for low-power-consumption on-chip communication applications.

Publication Types