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Martin AA, Toth M. Cryogenic electron beam induced chemical etching. ACS Appl Mater Interfaces. 2014;6(21):18457-60doi: 10.1021/am506163w.
Martin, A. A., & Toth, M. (2014). Cryogenic electron beam induced chemical etching. ACS applied materials & interfaces, 6(21), 18457-60. https://doi.org/10.1021/am506163w
Martin, Aiden A, and Toth, Milos. "Cryogenic electron beam induced chemical etching." ACS applied materials & interfaces vol. 6,21 (2014): 18457-60. doi: https://doi.org/10.1021/am506163w
Martin AA, Toth M. Cryogenic electron beam induced chemical etching. ACS Appl Mater Interfaces. 2014 Nov 12;6(21):18457-60. doi: 10.1021/am506163w. Epub 2014 Oct 23. PMID: 25333843.
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ACS Appl Mater Interfaces. 2014 Nov 12;6(21):18457-60. doi: 10.1021/am506163w. Epub 2014 Oct 23.

Cryogenic electron beam induced chemical etching.

ACS applied materials & interfaces

Aiden A Martin, Milos Toth

Affiliations

  1. School of Physics and Advanced Materials, University of Technology, Sydney , 15 Broadway, Ultimo, New South Wales 2007, Australia.

PMID: 25333843 DOI: 10.1021/am506163w

Abstract

Cryogenic cooling is used to enable efficient, gas-mediated electron beam induced etching (EBIE) in cases where the etch rate is negligible at room and elevated substrate temperatures. The process is demonstrated using nitrogen trifluoride (NF3) as the etch precursor, and Si, SiO2, SiC, and Si3N4 as the materials volatilized by an electron beam. Cryogenic cooling broadens the range of precursors that can be used for EBIE, and enables high-resolution, deterministic etching of materials that are volatilized spontaneously by conventional etch precursors as demonstrated here by NF3 and XeF2 EBIE of silicon.

Keywords: electron beam induced etching; nanofabrication; nitrogen trifluoride; reaction kinetics; silicon; surface chemistry

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