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Mueller P, Thiel M, Wegener M. 3D direct laser writing using a 405  nm diode laser. Opt Lett. 2014;39(24):6847-50doi: 10.1364/OL.39.006847.
Mueller, P., Thiel, M., & Wegener, M. (2014). 3D direct laser writing using a 405  nm diode laser. Optics letters, 39(24), 6847-50. https://doi.org/10.1364/OL.39.006847
Mueller, Patrick, et al. "3D direct laser writing using a 405  nm diode laser." Optics letters vol. 39,24 (2014): 6847-50. doi: https://doi.org/10.1364/OL.39.006847
Mueller P, Thiel M, Wegener M. 3D direct laser writing using a 405  nm diode laser. Opt Lett. 2014 Dec 15;39(24):6847-50. doi: 10.1364/OL.39.006847. PMID: 25503012.
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Opt Lett. 2014 Dec 15;39(24):6847-50. doi: 10.1364/OL.39.006847.

3D direct laser writing using a 405  nm diode laser.

Optics letters

Patrick Mueller, Michael Thiel, Martin Wegener

PMID: 25503012 DOI: 10.1364/OL.39.006847

Abstract

Three-dimensional (3D) direct laser writing commonly uses near-infrared femtosecond laser pulses. Here, we use a quasi-cw blue diode laser at a 405 nm wavelength. As prerequisite, we identify photoresist systems that unambiguously show nonlinear multiphoton polymerization at this excitation wavelength. Next, we obtain a diffraction-limited focus with a high-numerical-aperture objective lens (NA=1.4), which is crucial to actually benefit from the wavelength advantage. To evaluate the anticipated reduced linewidths and improved resolution, we fabricate and characterize 2D and 3D benchmark structures. Finally, we also demonstrate dip-in direct laser writing with our setup.

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