Display options
Cite
Malfatti L, Pinna A, Enzo S, et al. Tuning the phase transition of ZnO thin films through lithography: an integrated bottom-up and top-down processing. J Synchrotron Radiat. 2015;22(1):165-71doi: 10.1107/S1600577514024047.
Malfatti, L., Pinna, A., Enzo, S., Falcaro, P., Marmiroli, B., & Innocenzi, P. (2015). Tuning the phase transition of ZnO thin films through lithography: an integrated bottom-up and top-down processing. Journal of synchrotron radiation, 22(1), 165-71. https://doi.org/10.1107/S1600577514024047
Malfatti, Luca, et al. "Tuning the phase transition of ZnO thin films through lithography: an integrated bottom-up and top-down processing." Journal of synchrotron radiation vol. 22,1 (2015): 165-71. doi: https://doi.org/10.1107/S1600577514024047
Malfatti L, Pinna A, Enzo S, Falcaro P, Marmiroli B, Innocenzi P. Tuning the phase transition of ZnO thin films through lithography: an integrated bottom-up and top-down processing. J Synchrotron Radiat. 2015 Jan;22(1):165-71. doi: 10.1107/S1600577514024047. Epub 2015 Jan 01. PMID: 25537604.
Copy Download .nbib Format: NLM
Share it on

J Synchrotron Radiat. 2015 Jan;22(1):165-71. doi: 10.1107/S1600577514024047. Epub 2015 Jan 01.

Tuning the phase transition of ZnO thin films through lithography: an integrated bottom-up and top-down processing.

Journal of synchrotron radiation

Luca Malfatti, Alessandra Pinna, Stefano Enzo, Paolo Falcaro, Benedetta Marmiroli, Plinio Innocenzi

Affiliations

  1. Laboratorio di Scienza dei Materiali e Nanotecnologie, CR-INSTM, Università di Sassari, Palazzo Pou Salit, Piazza Duomo 6, 07041 Alghero (SS), Italy.
  2. Dipartimento di Chimica e Farmacia, Università di Sassari, Local INSTM Unit, Via Vienna 2, 07100 Sassari, Italy.
  3. Division of Materials Science and Engineering, CSIRO, Private Bag 33, Clayton South MDC, Victoria 3169, Australia.
  4. Institute of Inorganic Chemistry, Graz University of Technology, Stremayrgasse 9/IV, 8010 Graz, Austria.

PMID: 25537604 DOI: 10.1107/S1600577514024047

Abstract

An innovative approach towards the physico-chemical tailoring of zinc oxide thin films is reported. The films have been deposited by liquid phase using the sol-gel method and then exposed to hard X-rays, provided by a synchrotron storage ring, for lithography. The use of surfactant and chelating agents in the sol allows easy-to-pattern films made by an organic-inorganic matrix to be deposited. The exposure to hard X-rays strongly affects the nucleation and growth of crystalline ZnO, triggering the formation of two intermediate phases before obtaining a wurtzite-like structure. At the same time, X-ray lithography allows for a fast patterning of the coatings enabling microfabrication for sensing and arrays technology.

Keywords: bottom-up/top-down; lithography; sol–gel; thin film; zinc oxide

Publication Types