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Corbet CM, McClellan C, Rai A, et al. Field effect transistors with current saturation and voltage gain in ultrathin ReS2. ACS Nano. 2014;9(1):363-70doi: 10.1021/nn505354a.
Corbet, C. M., McClellan, C., Rai, A., Sonde, S. S., Tutuc, E., & Banerjee, S. K. (2015). Field effect transistors with current saturation and voltage gain in ultrathin ReS2. ACS nano, 9(1), 363-70. https://doi.org/10.1021/nn505354a
Corbet, Chris M, et al. "Field effect transistors with current saturation and voltage gain in ultrathin ReS2." ACS nano vol. 9,1 (2015): 363-70. doi: https://doi.org/10.1021/nn505354a
Corbet CM, McClellan C, Rai A, Sonde SS, Tutuc E, Banerjee SK. Field effect transistors with current saturation and voltage gain in ultrathin ReS2. ACS Nano. 2015 Jan 27;9(1):363-70. doi: 10.1021/nn505354a. Epub 2014 Dec 24. PMID: 25514177.
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ACS Nano. 2015 Jan 27;9(1):363-70. doi: 10.1021/nn505354a. Epub 2014 Dec 24.

Field effect transistors with current saturation and voltage gain in ultrathin ReS2.

ACS nano

Chris M Corbet, Connor McClellan, Amritesh Rai, Sushant Sudam Sonde, Emanuel Tutuc, Sanjay K Banerjee

Affiliations

  1. Department of Electrical Engineering, The University of Texas at Austin , Austin, Texas 78712, United States.

PMID: 25514177 DOI: 10.1021/nn505354a

Abstract

We report the fabrication and device characteristics of exfoliated, few-layer, dual-gated ReS2 field effect transistors (FETs). The ReS2 FETs display n-type behavior with a room temperature Ion/I(off) of 10(5). Many devices were studied with a maximum intrinsic mobility of 12 cm(2) · V(-1) · s(-1) at room temperature and 26 cm(2) · V(-1) · s(-1) at 77 K. The Cr/Au-ReS2 contact resistance determined using the transfer length method is gate-bias dependent and ranges from 175 kΩ · μm to 5 kΩ · μm, and shows an exponential dependence on back-gate voltage indicating Schottky barriers at the source and drain contacts. Dual-gated ReS2 FETs demonstrate current saturation, voltage gain, and a subthreshold swing of 148 mV/decade.

Keywords: TMD; gain; mobility; rhenium disulfide; saturation; transistor

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