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Musolino M, Tahraoui A, Fernández-Garrido S, et al. Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes. Nanotechnology. 2015;26(8):085605doi: 10.1088/0957-4484/26/8/085605.
Musolino, M., Tahraoui, A., Fernández-Garrido, S., Brandt, O., Trampert, A., Geelhaar, L., & Riechert, H. (2015). Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes. Nanotechnology, 26(8), 085605. https://doi.org/10.1088/0957-4484/26/8/085605
Musolino, M, et al. "Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes." Nanotechnology vol. 26,8 (2015): 085605. doi: https://doi.org/10.1088/0957-4484/26/8/085605
Musolino M, Tahraoui A, Fernández-Garrido S, Brandt O, Trampert A, Geelhaar L, Riechert H. Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes. Nanotechnology. 2015 Feb 27;26(8):085605. doi: 10.1088/0957-4484/26/8/085605. Epub 2015 Feb 06. PMID: 25656795.
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