Cite
Deng H, Endo K, Yamamura K. Competition between surface modification and abrasive polishing: a method of controlling the surface atomic structure of 4H-SiC (0001). Sci Rep. 2015;5:8947doi: 10.1038/srep08947.
Deng, H., Endo, K., & Yamamura, K. (2015). Competition between surface modification and abrasive polishing: a method of controlling the surface atomic structure of 4H-SiC (0001). Scientific reports, 58947. https://doi.org/10.1038/srep08947
Deng, Hui, et al. "Competition between surface modification and abrasive polishing: a method of controlling the surface atomic structure of 4H-SiC (0001)." Scientific reports vol. 5 (2015): 8947. doi: https://doi.org/10.1038/srep08947
Deng H, Endo K, Yamamura K. Competition between surface modification and abrasive polishing: a method of controlling the surface atomic structure of 4H-SiC (0001). Sci Rep. 2015 Mar 10;5:8947. doi: 10.1038/srep08947. PMID: 25752524; PMCID: PMC4353996.
Copy
Download .nbib