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Tsin F, Venerosy A, Vidal J, et al. Electrodeposition of ZnO window layer for an all-atmospheric fabrication process of chalcogenide solar cell. Sci Rep. 2015;5:8961doi: 10.1038/srep08961.
Tsin, F., Venerosy, A., Vidal, J., Collin, S., Clatot, J., Lombez, L., Paire, M., Borensztajn, S., Broussillou, C., Grand, P. P., Jaime, S., Lincot, D., & Rousset, J. (2015). Electrodeposition of ZnO window layer for an all-atmospheric fabrication process of chalcogenide solar cell. Scientific reports, 58961. https://doi.org/10.1038/srep08961
Tsin, Fabien, et al. "Electrodeposition of ZnO window layer for an all-atmospheric fabrication process of chalcogenide solar cell." Scientific reports vol. 5 (2015): 8961. doi: https://doi.org/10.1038/srep08961
Tsin F, Venerosy A, Vidal J, Collin S, Clatot J, Lombez L, Paire M, Borensztajn S, Broussillou C, Grand PP, Jaime S, Lincot D, Rousset J. Electrodeposition of ZnO window layer for an all-atmospheric fabrication process of chalcogenide solar cell. Sci Rep. 2015 Mar 10;5:8961. doi: 10.1038/srep08961. PMID: 25753657; PMCID: PMC4353998.
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Sci Rep. 2015 Mar 10;5:8961. doi: 10.1038/srep08961.

Electrodeposition of ZnO window layer for an all-atmospheric fabrication process of chalcogenide solar cell.

Scientific reports

Fabien Tsin, Amélie Venerosy, Julien Vidal, Stéphane Collin, Johnny Clatot, Laurent Lombez, Myriam Paire, Stephan Borensztajn, Cédric Broussillou, Pierre Philippe Grand, Salvador Jaime, Daniel Lincot, Jean Rousset

Affiliations

  1. 1] EDF R&D, 6 quai Watier, 78400 Chatou Cedex, France [2] IRDEP, Institute of Research and Development on Photovoltaic Energy, UMR 7174 CNRS EDF Chimie ParisTech, 6 quai Watier, 78400 Chatou Cedex, France.
  2. 1] CNRS, 6 quai Watier, 78400 Chatou Cedex, France [2] IRDEP, Institute of Research and Development on Photovoltaic Energy, UMR 7174 CNRS EDF Chimie ParisTech, 6 quai Watier, 78400 Chatou Cedex, France.
  3. LPN, Laboratoire for Photonics and Nanostructures, UPR 20 CNRS, Route de Nozay, 91460 Marcoussis, France.
  4. NEXCIS Photovoltaic Technology, 13790 Rousset, France.

PMID: 25753657 PMCID: PMC4353998 DOI: 10.1038/srep08961

Abstract

This paper presents the low cost electrodeposition of a transparent and conductive chlorine doped ZnO layer with performances comparable to that produced by standard vacuum processes. First, an in-depth study of the defect physics by ab-initio calculation shows that chlorine is one of the best candidates to dope the ZnO. This result is experimentally confirmed by a complete optical analysis of the ZnO layer deposited in a chloride rich solution. We demonstrate that high doping levels (>10(20) cm(-3)) and mobilities (up to 20 cm(2) V(-1) s(-1)) can be reached by insertion of chlorine in the lattice. The process developed in this study has been applied on a CdS/Cu(In,Ga)(Se,S)2 p-n junction produced in a pilot line by a non vacuum process, to be tested as solar cell front contact deposition method. As a result efficiency of 14.3% has been reached opening the way of atmospheric production of Cu(In,Ga)(Se,S)2 solar cell.

References

  1. Adv Mater. 2014 Jan;26(4):632-6 - PubMed

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