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ACS Appl Mater Interfaces. 2015 Feb 04;7(4):2149-52. doi: 10.1021/am505174p. Epub 2015 Jan 23.

Self-assembled metallic nanowire-based vertical organic field-effect transistor.

ACS applied materials & interfaces

Ariel J Ben-Sasson, Daniel Azulai, Hagit Gilon, Antonio Facchetti, Gil Markovich, Nir Tessler

Affiliations

  1. Sara and Moshe Zisapel Nano-Electronics Center, Department of Electrical Engineering, Technion-Israel Institute of Technology , Haifa 3200, Israel.

PMID: 25602371 DOI: 10.1021/am505174p

Abstract

We report on in situ, self-assembly, solution-processing of metallic (Au/Ag) nanowire-based transparent electrodes integrated to vertical organic field-effect transistors (VOFETs). In the VOFET architecture, the nanowires' microstructure facilitates current modulation by the gate across the otherwise shielding sandwiched source electrode. We show N-type VOFETs operation with on/off ratio ∼1 × 10(5) and high current density (>1 mA cm(-2) at VDS = 5 V). The integration of the device design and the transparent electrode deposition methods offers a potential route for all-solution processing-based, large-area, high-efficiency organic electronics.

Keywords: nanowires; organic electronics; self-assembly; transparent electrodes; vertical FETs

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