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Muhonen JT, Laucht A, Simmons S, et al. Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking. J Phys Condens Matter. 2015;27(15):154205doi: 10.1088/0953-8984/27/15/154205.
Muhonen, J. T., Laucht, A., Simmons, S., Dehollain, J. P., Kalra, R., Hudson, F. E., Freer, S., Itoh, K. M., Jamieson, D. N., McCallum, J. C., Dzurak, A. S., & Morello, A. (2015). Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking. Journal of physics. Condensed matter : an Institute of Physics journal, 27(15), 154205. https://doi.org/10.1088/0953-8984/27/15/154205
Muhonen, J T, et al. "Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking." Journal of physics. Condensed matter : an Institute of Physics journal vol. 27,15 (2015): 154205. doi: https://doi.org/10.1088/0953-8984/27/15/154205
Muhonen JT, Laucht A, Simmons S, Dehollain JP, Kalra R, Hudson FE, Freer S, Itoh KM, Jamieson DN, McCallum JC, Dzurak AS, Morello A. Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking. J Phys Condens Matter. 2015 Apr 22;27(15):154205. doi: 10.1088/0953-8984/27/15/154205. Epub 2015 Mar 18. PMID: 25783435.
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