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Jeong H, Jeong HJ, Oh HM, et al. Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes. Sci Rep. 2015;5:9373doi: 10.1038/srep09373.
Jeong, H., Jeong, H. J., Oh, H. M., Hong, C. H., Suh, E. K., Lerondel, G., & Jeong, M. S. (2015). Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes. Scientific reports, 59373. https://doi.org/10.1038/srep09373
Jeong, Hyun, et al. "Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes." Scientific reports vol. 5 (2015): 9373. doi: https://doi.org/10.1038/srep09373
Jeong H, Jeong HJ, Oh HM, Hong CH, Suh EK, Lerondel G, Jeong MS. Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes. Sci Rep. 2015 Mar 20;5:9373. doi: 10.1038/srep09373. PMID: 25792246; PMCID: PMC4366764.
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Sci Rep. 2015 Mar 20;5:9373. doi: 10.1038/srep09373.

Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes.

Scientific reports

Hyun Jeong, Hyeon Jun Jeong, Hye Min Oh, Chang-Hee Hong, Eun-Kyung Suh, Gilles Lerondel, Mun Seok Jeong

Affiliations

  1. 1] Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746, Republic of Korea [2] Laboratoire de Nanotechnologie et d'Instrumentation Optique, Institut Charles Delaunay, CNRS-UMR 6281, Université de Technologie de Troyes, BP 2060, 10010 Troyes, France.
  2. 1] Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746, Republic of Korea [2] Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
  3. School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, Republic of Korea.
  4. 1] Laboratoire de Nanotechnologie et d'Instrumentation Optique, Institut Charles Delaunay, CNRS-UMR 6281, Université de Technologie de Troyes, BP 2060, 10010 Troyes, France [2] Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea.

PMID: 25792246 PMCID: PMC4366764 DOI: 10.1038/srep09373

Abstract

Carrier localization phenomena in indium-rich InGaN/GaN multiple quantum wells (MQWs) grown on sapphire and GaN substrates were investigated. Temperature-dependent photoluminescence (PL) spectroscopy, ultraviolet near-field scanning optical microscopy (NSOM), and confocal time-resolved PL (TRPL) spectroscopy were employed to verify the correlation between carrier localization and crystal quality. From the spatially resolved PL measurements, we observed that the distribution and shape of luminescent clusters, which were known as an outcome of the carrier localization, are strongly affected by the crystalline quality. Spectroscopic analysis of the NSOM signal shows that carrier localization of MQWs with low crystalline quality is different from that of MQWs with high crystalline quality. This interrelation between carrier localization and crystal quality is well supported by confocal TRPL results.

References

  1. Sci Rep. 2014;4:6734 - PubMed
  2. Nature. 2000 Aug 24;406(6798):865-8 - PubMed
  3. Sci Rep. 2014 Jun 23;4:5325 - PubMed
  4. Opt Express. 2011 Jul 4;19 Suppl 4:A991-A1007 - PubMed
  5. Sci Rep. 2013 Nov 13;3:3201 - PubMed
  6. Science. 1998 Aug 14;281(5379):955-61 - PubMed
  7. Opt Lett. 2010 Oct 1;35(19):3285-7 - PubMed
  8. Science. 1995 Jan 6;267(5194):51-5 - PubMed
  9. Sci Rep. 2013 Dec 17;3:3389 - PubMed
  10. Phys Rev B Condens Matter. 1996 Jun 15;53(24):16425-16428 - PubMed

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