Display options
Cite
Illera S, Prades JD, Cirera A, et al. A transfer hamiltonian model for devices based on quantum dot arrays. ScientificWorldJournal. 2015;2015:426541doi: 10.1155/2015/426541.
Illera, S., Prades, J. D., Cirera, A., & Cornet, A. (2015). A transfer hamiltonian model for devices based on quantum dot arrays. TheScientificWorldJournal, 2015426541. https://doi.org/10.1155/2015/426541
Illera, S, et al. "A transfer hamiltonian model for devices based on quantum dot arrays." TheScientificWorldJournal vol. 2015 (2015): 426541. doi: https://doi.org/10.1155/2015/426541
Illera S, Prades JD, Cirera A, Cornet A. A transfer hamiltonian model for devices based on quantum dot arrays. ScientificWorldJournal. 2015;2015:426541. doi: 10.1155/2015/426541. Epub 2015 Mar 24. PMID: 25879055; PMCID: PMC4387948.
Copy Download .nbib Format: NLM
Share it on

ScientificWorldJournal. 2015;2015:426541. doi: 10.1155/2015/426541. Epub 2015 Mar 24.

A transfer hamiltonian model for devices based on quantum dot arrays.

TheScientificWorldJournal

S Illera, J D Prades, A Cirera, A Cornet

Affiliations

  1. MIND/INUB Departament d'Electrònica, Universitat de Barcelona, C/Martí i Franquès 1, 08028 Barcelona, Spain.

PMID: 25879055 PMCID: PMC4387948 DOI: 10.1155/2015/426541

Abstract

We present a model of electron transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. The method underlying the model depends only on fundamental parameters of the system and it is based on the Transfer Hamiltonian approach. A set of noncoherent rate equations can be written and the interaction between the quantum dots and between the quantum dots and the electrodes is introduced by transition rates and capacitive couplings. A realistic modelization of the capacitive couplings, the transmission coefficients, the electron/hole tunneling currents, and the density of states of each quantum dot have been taken into account. The effects of the local potential are computed within the self-consistent field regime. While the description of the theoretical framework is kept as general as possible, two specific prototypical devices, an arbitrary array of quantum dots embedded in a matrix insulator and a transistor device based on quantum dots, are used to illustrate the kind of unique insight that numerical simulations based on the theory are able to provide.

References

  1. Nanotechnology. 2009 Apr 15;20(15):155201 - PubMed
  2. Phys Rev Lett. 1987 Aug 17;59(7):807-810 - PubMed
  3. Science. 2000 Sep 22;289(5487):2105-8 - PubMed
  4. Phys Rev Lett. 1995 Jul 24;75(4):705-708 - PubMed
  5. Phys Rev Lett. 1995 Jun 5;74(23):4702-4705 - PubMed
  6. Phys Rev Lett. 1993 Nov 1;71(18):2991-2994 - PubMed
  7. Phys Rev B Condens Matter. 1988 Dec 15;38(18):12807-12813 - PubMed
  8. Phys Rev Lett. 1993 Dec 13;71(24):4019-4022 - PubMed
  9. Phys Rev B Condens Matter. 1996 Apr 15;53(16):11176-11185 - PubMed
  10. Phys Rev Lett. 1992 Apr 20;68(16):2512-2515 - PubMed

Publication Types