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Xenogiannopoulou E, Tsipas P, Aretouli KE, et al. High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy. Nanoscale. 2015;7(17):7896-905doi: 10.1039/c4nr06874b.
Xenogiannopoulou, E., Tsipas, P., Aretouli, K. E., Tsoutsou, D., Giamini, S. A., Bazioti, C., Dimitrakopulos, G. P., Komninou, P., Brems, S., Huyghebaert, C., Radu, I. P., & Dimoulas, A. (2015). High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy. Nanoscale, 7(17), 7896-905. https://doi.org/10.1039/c4nr06874b
Xenogiannopoulou, E, et al. "High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy." Nanoscale vol. 7,17 (2015): 7896-905. doi: https://doi.org/10.1039/c4nr06874b
Xenogiannopoulou E, Tsipas P, Aretouli KE, Tsoutsou D, Giamini SA, Bazioti C, Dimitrakopulos GP, Komninou P, Brems S, Huyghebaert C, Radu IP, Dimoulas A. High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy. Nanoscale. 2015 May 07;7(17):7896-905. doi: 10.1039/c4nr06874b. PMID: 25856730.
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Nanoscale. 2015 May 07;7(17):7896-905. doi: 10.1039/c4nr06874b.

High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy.

Nanoscale

E Xenogiannopoulou, P Tsipas, K E Aretouli, D Tsoutsou, S A Giamini, C Bazioti, G P Dimitrakopulos, Ph Komninou, S Brems, C Huyghebaert, I P Radu, A Dimoulas

Affiliations

  1. Institute of Nanoscience and Nanotechnology, NCSR DEMOKRITOS, GR-15310, Athens, Greece. [email protected].

PMID: 25856730 DOI: 10.1039/c4nr06874b

Abstract

Atomically-thin, inherently 2D semiconductors offer thickness scaling of nanoelectronic devices and excellent response to light for low-power versatile applications. Using small exfoliated flakes, advanced devices and integrated circuits have already been realized, showing great potential to impact nanoelectronics. Here, high-quality single-crystal MoSe2 is grown by molecular beam epitaxy on AlN(0001)/Si(111), showing the potential for scaling up growth to low-cost, large-area substrates for mass production. The MoSe2 layers are epitaxially aligned with the aluminum nitride (AlN) lattice, showing a uniform, smooth surface and interfaces with no reaction or intermixing, and with sufficiently high band offsets. High-quality single-layer MoSe2 is obtained, with a direct gap evidenced by angle-resolved photoemission spectroscopy and further confirmed by Raman and intense room temperature photoluminescence. The successful growth of high-quality MoSe2/Bi2Se3 multilayers on AlN shows promise for novel devices exploiting the non-trivial topological properties of Bi2Se3.

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